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The FS200R12PT4PBOSA1 is an IGBT module from Infineon Technologies, utilizing the EconoPACK™4 package. It features a fast Trench/Fieldstop IGBT4 and an Emitter Controlled 4 diode with PressFIT terminals and pre-applied thermal interface material. The collector-emitter voltage (VCES) is rated at 1200 V. The continuous DC collector current (IC nom) is 200 A at TH = 65°C, with a repetitive peak collector current (ICRM) of 400 A. The typical VCEsat is 2.05 V at Tvj = 125°C. The module includes an NTC thermistor with a nominal resistance of 5.00 kΩ at 25°C.
Verify the specific ordering suffix PBOSA1 against official documentation to confirm exact configuration details. Ensure compatibility with PressFIT mounting tools and verify that the pre-applied thermal interface material meets storage and handling requirements as specified in application notes.
Select this module for applications requiring high current density and reliable press-fit connections. Consider the extended operating temperature range up to 150°C and the positive temperature coefficient of VCEsat for parallel operation stability. Evaluate thermal resistance values for heatsink design.
This component belongs to the Infineon EconoPACK™4 series, designed for industrial power electronics. It represents an evolution in IGBT modules by integrating advanced trench field-stop technology with robust mechanical connection methods, targeting efficiency improvements in medium to high-power conversion systems.
Public confirmed substitute part numbers are not available in the provided source material. Verify pinout and thermal characteristics before considering any alternative components from other manufacturers or different Infineon series.
The maximum repetitive peak collector current (ICRM) is 400 A for a pulse duration of 1 ms.
Yes, the module includes an NTC thermistor with a nominal resistance of 5.00 kΩ at 25°C.
The isolation test voltage is 2.5 kV AC for 1 minute at 50 Hz.