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The FS225R12KE4BOSA1 is an IGBT module from Infineon Technologies, utilizing Trench/Fieldstop IGBT4 technology within the EconoPACK+ B-series package. It features a collector-emitter voltage (VCES) of 1200 V and a continuous DC collector current (IC nom) of 225 A at TC = 95°C, rising to 320 A at TC = 25°C. The repetitive peak collector current (ICRM) reaches 450 A for 1 ms pulses. Total power dissipation (Ptot) is rated at 1100 W at TC = 25°C. The module includes an optimized Emitter Controlled Diode with a forward voltage (VF) of 1.65 V at Tvj = 25°C. Thermal resistance from junction to case is 0.14 K/W per IGBT and 0.19 K/W per diode. An integrated NTC thermistor provides temperature monitoring with a nominal resistance (R25) of 5.00 kΩ at 25°C.
Verify component authenticity by cross-referencing the manufacturer's part number against official datasheets. Confirm that the specific ordering suffix matches the required technical specifications. Ensure compliance with RoHS directives and relevant safety standards before integration into final assemblies.
Select this module for applications requiring 1200 V blocking capability and up to 225 A continuous current. Evaluate thermal management requirements based on the specified junction-to-case thermal resistance. Ensure gate drive circuits support the recommended ±15 V operating voltage for optimal switching characteristics.
This component belongs to Infineon's EconoPACK+ B-series lineup, designed for medium-power industrial applications. It represents a generation of modules integrating advanced IGBT4 technology with improved diode characteristics, offering enhanced reliability and efficiency compared to previous generations.
FS225R12KE4