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The FS225R12OE4PBOSA1 is a six-pack IGBT module from Infineon Technologies, utilizing Trench/Fieldstop IGBT4 technology and Emitter Controlled HE diodes. It features PressFIT connection technology with pre-applied thermal interface material. The module has a collector-emitter voltage (VCES) of 1200 V and a nominal continuous DC collector current (IC nom) of 225 A at TH = 80°C. The repetitive peak collector current (ICRM) is 450 A. Key electrical parameters include a typical VCE(sat) of 1.85 V at Tvj = 25°C and a gate threshold voltage (VGEth) of 5.80 V. The integrated NTC thermistor has a rated resistance (R25) of 5.00 kΩ.
Verify the specific ordering suffix PBOSA1 against official documentation to confirm component specifications. Ensure that the pre-applied thermal interface material requirements are met during storage and transport according to application notes. Confirm mechanical mounting torque values for M5 and M6 screws before installation.
Select this module for applications requiring high surge current capability and robust short-circuit withstand. Consider the 150°C operating junction temperature limit and the 2.5 kV isolation test voltage. Evaluate the thermal resistance characteristics and stray inductance values for circuit design optimization.
This component belongs to the EconoPACK+ series, designed for industrial power electronics. It represents an evolution in IGBT modules by integrating advanced trench fieldstop technology with press-fit connections. The module is UL approved and RoHS compliant, targeting demanding industrial environments.
Public confirmed substitute part numbers are not available in the provided source material. Verify compatibility with existing cooling structures and driver circuits if considering alternative models.
The maximum baseplate operation temperature (TBPmax) is 125 °C.
The module uses PressFIT connection technology for its terminals.
The typical gate charge (QG) is 1.55 µC.