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Product Detailed Parameters
- Description：IGBT MOD 1200V 40A 145W
- Series：-
- Mfr：Infineon Technologies
- Package：Tray
- IGBT Type：-
- Configuration：Full Bridge
- Vce(on) (Max) @ Vge, Ic：2.15V @ 15V, 25A
- Input：Standard
- NTC Thermistor：Yes
- Operating Temperature：-40°C ~ 125°C
- Mounting Type：Chassis Mount
- Package / Case：Module
- Supplier Device Package：Module
- Voltage - Collector Emitter Breakdown (Max)：1200 V
- Current - Collector (Ic) (Max)：40 A
- Power - Max：145 W
- Current - Collector Cutoff (Max)：5 mA
- Input Capacitance (Cies) @ Vce：1.8 nF @ 25 V
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Overview
The FS25R12KE3GBOSA1 is a six-pack IGBT module from Infineon Technologies, utilizing Trenchstop technology. It features a 1200 V collector-emitter voltage rating and a continuous collector current of 25 A at 25°C case temperature. The typical saturation voltage is 1.7 V at 25°C and 2.0 V at 125°C. Total power dissipation reaches 145 W. The module incorporates an integrated NTC thermistor with a rated resistance of 25 kΩ at 25°C. It operates within a junction temperature range of -40°C to +125°C and utilizes the EconoPACK+ package.
Feature Summary
- Six-pack topology integrating three IGBTs and three freewheeling diodes for efficient three-phase inverter applications.
- Integrated NTC thermistor enables precise thermal monitoring and protection within the module structure.
- Trenchstop technology provides optimized switching characteristics and low conduction losses.
Applications
- Three-phase motor drives
- Induction heating systems
- Uninterruptible power supplies (UPS)
Procurement Notes
Verify component authenticity by matching the manufacturer marking against the official datasheet specifications. Confirm the presence of the BOSA1 suffix designation during inspection. Ensure the packaging integrity remains intact prior to installation. Cross-reference the specific ordering code with authorized distribution channels to guarantee supply chain validity.
Selection Notes
Evaluate the thermal resistance parameters to ensure adequate heatsinking for the specified power dissipation limits. Verify that the gate drive circuitry supports the required ±15V swing for optimal switching performance. Consider the stray inductance constraints when designing the PCB layout to minimize voltage overshoot during high-speed transitions.
Part Context
This component belongs to the KE3 series of IGBT modules, which are designed for industrial power conversion. It represents a generation of modules combining robust silicon chips with advanced packaging technologies to deliver reliable performance in demanding electrical environments.
Replacement Considerations
Consult official replacement lists for direct equivalents. Verify pin compatibility and thermal interface dimensions before substituting. Ensure the alternative device meets or exceeds the original voltage and current ratings.
FAQ
What is the maximum short-circuit withstand time?
The module can withstand a short-circuit condition for up to 10 microseconds under specified gate voltage and junction temperature limits.
How does the saturation voltage vary with temperature?
The typical collector-emitter saturation voltage increases from 1.7 V at 25°C to 2.0 V at 125°C junction temperature.
What is the purpose of the integrated NTC?
The NTC thermistor allows for real-time monitoring of the module's internal temperature to prevent overheating and ensure safe operation.
