FS25R12KT3BPSA1

Overview

The FS25R12KT3BPSA1 is a six-pack IGBT module utilizing Trench/Fieldstop technology and EmCon High Efficiency diodes. It features a collector-emitter voltage of 1200 V, a continuous DC collector current of 25 A at 80°C case temperature, and a repetitive peak collector current of 50 A. The module integrates an NTC thermistor with a rated resistance of 5 kΩ at 25°C. Total power dissipation is 145 W at 25°C case temperature. Key electrical parameters include a maximum collector-emitter saturation voltage of 2.15 V at 125°C junction temperature and a forward voltage of 2.15 V for the integrated diode under identical conditions.

Feature Summary

• Integrates fast trench/fieldstop IGBT3 technology with high-efficiency EmCon diodes for optimized switching performance.
• Includes an embedded NTC thermistor to enable precise thermal monitoring within the module assembly.
• Features low stray inductance design to minimize switching losses and electromagnetic interference during operation.

Applications

• Industrial motor drives
• Switched-mode power supplies (SMPS)
• Inverter applications

Procurement Notes

Verify component authenticity by cross-referencing the manufacturer part number against official Infineon documentation. Confirm that the specific ordering suffix matches the required technical specifications. Ensure compliance with RoHS directives and verify the isolation test voltage requirements align with the target application safety standards before finalizing procurement.

Selection Notes

Select this module based on the 1200 V blocking capability and 25 A continuous current rating suitable for moderate power industrial loads. Evaluate the thermal resistance values to ensure adequate heatsinking can maintain the junction temperature below the 150°C maximum limit. Consider the gate threshold voltage and internal gate resistance when designing the driver circuitry for optimal switching speed control.

Part Context

This component belongs to the EconoPACK™2 series, designed for compact integration in modern power electronics. It utilizes silicon-based IGBT technology combined with fieldstop architecture to enhance efficiency compared to standard planar designs. The packaging provides robust mechanical stability and reliable electrical isolation for demanding industrial environments.

Replacement Considerations

Consult official Infineon replacement guides for direct substitutes. Verify pin compatibility and thermal characteristics when considering alternative models from other manufacturers. Ensure any replacement maintains the same voltage and current ratings to prevent system failure.

FAQ

What is the maximum junction temperature for this module?

The maximum allowable junction temperature for both the inverter and brake-chopper configurations is 150°C.

Does the module include thermal protection components?

Yes, the module integrates an NTC thermistor with a rated resistance of 5 kΩ at 25°C for temperature monitoring.

What is the typical stray inductance value?

The module stray inductance is specified as 19 nH, contributing to reduced switching losses.