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FS25SM-9A#B10 is listed in the Single FETs, MOSFETs range at ChipApex. The manufacturer field lists Renesas Electronics Corporation. Its product description is N-CHANNEL POWER MOSFET. Review the specifications below when checking this part for your BOM.
Single FETs, MOSFETs specifications for FS25SM-9A#B10
- Description：N-CHANNEL POWER MOSFET
- Series：*
- Mfr：Renesas Electronics Corporation
- Package：Bulk
- FET Type：-
- Technology：-
- Drain to Source Voltage (Vdss)：-
- Current - Continuous Drain (Id) @ 25°C：-
- Drive Voltage (Max Rds On, Min Rds On)：-
- Rds On (Max) @ Id, Vgs：-
- Vgs(th) (Max) @ Id：-
- Gate Charge (Qg) (Max) @ Vgs：-
- Vgs (Max)：-
- Input Capacitance (Ciss) (Max) @ Vds：-
- FET Feature：-
- Power Dissipation (Max)：-
- Operating Temperature：-
- Grade：-
- Qualification：-
- Mounting Type：-
- Supplier Device Package：-
- Package / Case：-
Single FETs, MOSFETs datasheet and documents for FS25SM-9A#B10
Single FETs, MOSFETs Overview
The FS25SM-9A#B10 is an N-channel power MOSFET manufactured by Renesas Electronics Corporation. It features a drain-source voltage (VDSS) of 450V and a continuous drain current (ID) of 25A at 25°C case temperature. The device exhibits a maximum static drain-source on-resistance (RDS(on)) of 0.16Ω when measured at a gate-source voltage (VGS) of 10V. It is housed in a TO-3P package, designed for high-voltage power switching applications requiring robust thermal performance and low conduction losses.
Single FETs, MOSFETs Feature Summary
- N-channel single power MOSFET architecture
- High voltage rating of 450V drain-source capability
- Low on-resistance for efficient power handling
- TO-3P package for enhanced thermal dissipation
Single FETs, MOSFETs Applications
- Industrial motor drives
- High-voltage power supplies
- Inverter circuits
- Power filtering applications
Single FETs, MOSFETs Procurement Notes
Verify the specific suffix #B10 against official Renesas documentation to confirm exact packaging and tape-and-reel specifications. Ensure the component matches the required 450V and 25A ratings for the target circuit design. Cross-reference the datasheet revision date to confirm compliance with current RoHS3 standards and material declarations before finalizing procurement orders.
Single FETs, MOSFETs Selection Notes
Select this component for applications demanding high breakdown voltage and moderate current capacity. The 0.16Ω RDS(on) specification indicates suitability for minimizing conduction losses in medium-power switching scenarios. Consider the TO-3P package constraints regarding mounting surface area and thermal interface requirements when designing the PCB layout or heatsink assembly.
Single FETs, MOSFETs Part Context
This part belongs to the discrete semiconductor category, specifically within the power transistor segment. It serves as a fundamental switching element in power electronics systems. The designation identifies it as a single N-channel device, distinct from dual or multi-channel configurations found in other series.
Single FETs, MOSFETs Replacement Considerations
Consult official Renesas replacement guides for direct equivalents. Verify that any substitute maintains identical VDSS, ID, and RDS(on) parameters. Ensure the replacement package matches the TO-3P form factor for mechanical compatibility.
Explore related parts through FETs, MOSFETs, Transistors, Discrete Semiconductor Products, all product categories.
