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The FS35R12KE3GBOSA1 is a Trenchstop IGBT7 silicon module manufactured by Infineon Technologies. It features a six-pack configuration with integrated freewheeling diodes, rated for a collector-emitter voltage of 1200 V and a continuous collector current of 55 A at 25°C (35 A at 100°C). The module utilizes EconoPACK+ packaging for base mounting and includes an NTC thermistor for thermal monitoring. Key electrical parameters include a maximum power dissipation of 200 W, a typical saturation voltage of 1.7 V at 35 A, and a short-circuit withstand time of up to 10 µs.
Verify the component against official datasheets to confirm technical specifications and authenticity. Ensure that the ordering suffix matches the required package variant and terminal configuration. Cross-reference part numbers with authorized distributors to avoid counterfeit products. Confirm RoHS compliance status prior to integration into regulated assemblies.
Evaluate the module's thermal resistance characteristics against the application's cooling requirements. Verify that the gate drive circuitry supports the specified threshold voltages and peak currents. Assess the short-circuit robustness limits relative to the protection circuitry response times in the target system design.
This component belongs to the FS35R12 series of IGBT modules from Infineon Technologies. It represents a generation of power semiconductors utilizing Trenchstop technology, designed to balance conduction losses with switching efficiency for medium-power industrial applications.
FS35R12KE3G is a direct substitute within the same product family.