FS35R12KE3GBOSA1

FS35R12KE3GBOSA1

$53.13
  • Description:FS35R12 - IGBT MODULE
  • Series:*

SKU:807f4387ebfd Category: Brand:

  
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Product Detailed Parameters

  • Description:FS35R12 - IGBT MODULE
  • Series:*
  • Mfr:Infineon Technologies
  • Package:Bulk
  • IGBT Type:-
  • Configuration:-
  • Vce(on) (Max) @ Vge, Ic:-
  • Input:-
  • NTC Thermistor:-
  • Operating Temperature:-
  • Mounting Type:-
  • Package / Case:-
  • Supplier Device Package:-
  • Voltage - Collector Emitter Breakdown (Max):-
  • Current - Collector (Ic) (Max):-
  • Power - Max:-
  • Current - Collector Cutoff (Max):-
  • Input Capacitance (Cies) @ Vce:-

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FS35R12KE3GBOSA1

Overview

The FS35R12KE3GBOSA1 is a Trenchstop IGBT7 silicon module manufactured by Infineon Technologies. It features a six-pack configuration with integrated freewheeling diodes, rated for a collector-emitter voltage of 1200 V and a continuous collector current of 55 A at 25°C (35 A at 100°C). The module utilizes EconoPACK+ packaging for base mounting and includes an NTC thermistor for thermal monitoring. Key electrical parameters include a maximum power dissipation of 200 W, a typical saturation voltage of 1.7 V at 35 A, and a short-circuit withstand time of up to 10 µs.

Feature Summary

  • Trenchstop IGBT7 technology providing optimized switching performance
  • Integrated NTC thermistor for precise junction temperature monitoring
  • EconoPACK+ housing designed for efficient thermal management

Applications

  • Industrial motor drives
  • Uninterruptible power supplies (UPS)
  • Switched-mode power supplies (SMPS)

Procurement Notes

Verify the component against official datasheets to confirm technical specifications and authenticity. Ensure that the ordering suffix matches the required package variant and terminal configuration. Cross-reference part numbers with authorized distributors to avoid counterfeit products. Confirm RoHS compliance status prior to integration into regulated assemblies.

Selection Notes

Evaluate the module's thermal resistance characteristics against the application's cooling requirements. Verify that the gate drive circuitry supports the specified threshold voltages and peak currents. Assess the short-circuit robustness limits relative to the protection circuitry response times in the target system design.

Part Context

This component belongs to the FS35R12 series of IGBT modules from Infineon Technologies. It represents a generation of power semiconductors utilizing Trenchstop technology, designed to balance conduction losses with switching efficiency for medium-power industrial applications.

Replacement Considerations

FS35R12KE3G is a direct substitute within the same product family.

FS35R12KE3GBOSA1FS35R12KE3GBOSA1
$53.13
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