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The FS35R12KT3BPSA1 is a six-pack IGBT module from Infineon Technologies, utilizing Trench/Fieldstop IGBT3 technology and an Emitter Controlled High Efficiency diode. It features a collector-emitter voltage of 1200 V and a continuous DC collector current of 55 A at 25°C. The module operates within a junction temperature range of -40°C to 125°C. Key electrical parameters include a maximum collector-emitter saturation voltage of 2.15 V and a total power dissipation of 210 W. It incorporates an integrated NTC thermistor with a nominal resistance of 5 kΩ at 25°C for thermal monitoring.
Verify the specific ordering suffix against official documentation to confirm package type and terminal configuration. Ensure compliance with RoHS directives and check for any lead-free manufacturing requirements relevant to your assembly process before finalizing procurement orders.
Select this component based on its 1200 V blocking capability and 55 A continuous current rating. Evaluate the thermal resistance values to ensure adequate heatsinking for the specified power dissipation. Confirm that the gate drive circuitry matches the required threshold voltages and internal gate resistor specifications.
This module belongs to the EconoPACK™2 series, designed for compact power electronics applications. It represents Infineon's third-generation trench field-stop technology, balancing conduction losses with switching speeds for industrial efficiency.
Consult official cross-reference lists for compatible modules with identical pinouts and thermal characteristics. Verify that alternative components meet the same voltage, current, and switching energy loss specifications.
The rated resistance (R25) of the integrated NTC thermistor is 5.00 kΩ at a case temperature of 25°C.
The module supports a short-circuit pulse width of up to 10 µs under specified conditions.
The module exhibits a typical stray inductance (LsCE) of 19 nH.