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The FS3L200R10W3S7F_B94 is an EasyPACK™ module integrating TRENCHSTOP™ IGBT7 and CoolSiC™ Schottky diode technology. It features a collector-emitter voltage of 950 V, nominal current of 100 A, and peak current of 200 A. The boost diode supports 40 A nominal current with a repetitive peak reverse voltage of 1200 V. Thermal resistance from junction to heatsink is 0.667 K/W for the IGBT and 0.979 K/W for the boost diode. An integrated NTC thermistor provides temperature monitoring.
Verify component authenticity by cross-referencing the module label code against Infineon's official documentation standards. Ensure compliance with industrial qualification requirements specified in IEC 60747, 60749, and 60068 before integration into final designs.
Select this module for high-efficiency power conversion requiring low switching losses. Consider the 950 V rating and 100 A nominal current for appropriate system sizing. Verify PCB hole pattern compatibility with the PressFIT pin grid and ensure adequate heatsinking to maintain junction temperatures within operational limits.
This component belongs to the EasyPACK™ series, designed for compact and flexible power electronics layouts. It represents a hybrid solution combining silicon IGBTs with silicon carbide diodes to optimize performance in modern power conversion architectures.
Consult official Infineon substitution guides for compatible modules. Verify electrical parameters, package dimensions, and thermal characteristics match application requirements before considering alternative part numbers.
The maximum operating junction temperature (Tvj op) for the IGBT is 150 °C.
The rated resistance (R25) of the NTC thermistor at 25 °C is 5 kΩ.
The isolation test voltage (VISOL RMS) is 3.2 kV at 50 Hz for 1 minute.