FS3L40R07W2H5FB11BOMA1

FS3L40R07W2H5FB11BOMA1

$55.50
  • Description:IGBT MODULE LOW POWER EASY
  • Series:EasyPACK™

SKU:7a85d2bcb163 Category: Brand:

  
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Product Detailed Parameters

  • Description:IGBT MODULE LOW POWER EASY
  • Series:EasyPACK™
  • Mfr:Infineon Technologies
  • Package:Bulk,Tray
  • IGBT Type:Trench Field Stop
  • Configuration:Three Phase Inverter
  • Vce(on) (Max) @ Vge, Ic:1.81V @ 15V, 20A
  • Input:Standard
  • NTC Thermistor:Yes
  • Operating Temperature:-40°C ~ 150°C (TJ)
  • Mounting Type:Chassis Mount
  • Package / Case:Module
  • Supplier Device Package:AG-EASY2B-2
  • Voltage - Collector Emitter Breakdown (Max):650 V
  • Current - Collector (Ic) (Max):40 A
  • Power - Max:-
  • Current - Collector Cutoff (Max):18 µA
  • Input Capacitance (Cies) @ Vce:2 nF @ 25 V

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FS3L40R07W2H5FB11BOMA1

Overview

The FS3L40R07W2H5F_B11 is an EasyPACK module integrating TRENCHSTOP IGBT 5 H5 and CoolSiC Schottky diode with PressFIT/NTC. Collector-emitter voltage (VCES) is 650 V. Implemented collector current (ICN) is 40 A, with continuous DC collector current (ICDC) of 20 A at TH = 65°C and repetitive peak collector current (ICRM) of 80 A. Gate-emitter peak voltage (VGES) is +/-20 V. Collector-emitter saturation voltage (VCEsat) ranges from 1.40 V to 1.81 V depending on temperature. Diode forward voltage (VF) ranges from 1.50 V to 2.15 V. NTC thermistor rated resistance (R25) is 5 kΩ. Operating junction temperature range is -40 °C to 150 °C.

Feature Summary

  • Integrates TRENCHSTOP IGBT 5 H5 technology for low switching losses
  • Features CoolSiC Schottky diode Gen 5 with increased blocking voltage capability up to 650 V
  • Utilizes Al2O3 substrate with low thermal resistance
  • Employs PressFIT contact technology with integrated mounting clamps

Applications

  • 3-level applications
  • Motor drives
  • Solar applications
  • UPS systems

Procurement Notes

Verify the exact ordering suffix against official Infineon documentation to confirm mechanical and electrical specifications. Ensure compatibility with PressFIT assembly processes and required mounting forces between 40 N and 80 N per clamp. Confirm that the operating environment stays within the specified thermal limits and isolation test voltage requirements.

Selection Notes

Select this module for designs requiring a 650 V rating with high current density. The combination of IGBT 5 H5 and CoolSiC diodes offers optimized switching performance. Consider the 40 A implemented current and 20 A continuous DC current limits when designing the thermal management system. Verify gate drive requirements match the specified threshold and charge characteristics.

Part Context

This component belongs to the EasyPACK family, designed for compact power conversion solutions. It combines advanced silicon IGBT technology with silicon carbide diodes to enhance efficiency in medium-power industrial applications. The module format supports robust mounting and efficient heat dissipation through its aluminum oxide substrate.

Replacement Considerations

Consult official Infineon cross-reference tools for verified substitutes. Ensure any replacement matches the 650 V rating, EasyPACK form factor, and PressFIT termination style. Verify that thermal resistance and pinout configurations are compatible with existing PCB layouts and heatsink interfaces.

FS3L40R07W2H5FB11BOMA1FS3L40R07W2H5FB11BOMA1
$55.50
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