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The FS3L50R07W2H3B11BPSA1 is a 650 V, 50 A three-level IGBT module from Infineon Technologies. It integrates fast Trench/Fieldstop IGBT3 and Rapid 1 diodes in an EasyPACK package with PressFIT technology. The module features an Al2O3 substrate for low thermal resistance and integrated mounting clamps. Electrical characteristics include a collector-emitter saturation voltage of 1.45 V to 1.80 V at 50 A and a continuous DC collector current of 50 A at TC=95°C. It includes an NTC thermistor (5 kΩ) for thermal monitoring.
Verify the specific ordering suffix B11 against official documentation to confirm the exact configuration and terminal type. Ensure that the required PressFIT tooling is available for installation, as standard soldering methods are not applicable for this connection technology. Confirm compliance with relevant industrial standards before integration into final equipment designs.
Select this component for designs requiring a 650 V rating with a 50 A nominal current capability. The three-level topology is suitable for reducing switching losses and electromagnetic interference compared to two-level alternatives. Consider the thermal resistance values when designing the heatsink interface to ensure junction temperatures remain within the specified operational limits under expected load conditions.
This module belongs to the EasyPACK family, which offers a compact design optimized for modern power electronics. It utilizes Infineon's TrenchStop technology to balance conduction and switching performance. The inclusion of PressFIT connections distinguishes it from traditional soldered modules, offering improved mechanical stability and thermal cycling robustness for industrial environments.
Consult official replacement lists for direct equivalents. Verify pin compatibility and thermal characteristics if substituting with other three-level modules. Ensure gate drive requirements match the new component's threshold and charge specifications.