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The FS450R12OE4P is a six-pack IGBT module from Infineon Technologies, utilizing Trench/Fieldstop IGBT4 technology and an Emitter Controlled HE Diode. It features PressFIT contact technology with pre-applied thermal interface material. The collector-emitter voltage (VCES) is 1200 V, with a continuous DC collector current (IC nom) of 450 A at TH = 60°C and Tvj max = 175°C. The repetitive peak collector current (ICRM) is 900 A for tP = 1 ms. The typical collector-emitter saturation voltage (VCE sat) is 1.75 V at Tvj = 25°C, rising to 2.10 V at Tvj = 150°C. Gate-emitter peak voltage (VGES) is +/-20 V. The operating junction temperature range is -40°C to 150°C.
Verify the specific ordering suffix OE4P against official documentation to confirm the inclusion of PressFIT contacts and pre-applied TIM. Ensure that the procurement channel provides valid RoHS compliance certificates and datasheet version V3.0 or later. Confirm that the module serial number and datecode match the required production batch specifications.
Select this module when high mechanical robustness and simplified assembly are required due to the PressFIT design. Consider the integrated NTC sensor if active thermal management is necessary. Verify that the application can accommodate the 1200 V rating and 450 A continuous current limits under the specified heatsink temperatures.
This component belongs to the EconoPACK+ series featuring Trenchstop IGBT4 technology. It is designed as a six-pack inverter module. The 'E' indicates the integration of an Emitter Controlled HE Diode, while 'O' denotes the PressFIT terminal configuration. This distinguishes it from screw-mount variants within the same electrical family.
FS450R12OE4PBOSA1
The maximum baseplate operation temperature (TBPmax) is 125 °C.
Yes, the module includes an integrated NTC temperature sensor with a rated resistance of 5.00 kΩ at 25°C.
The typical gate threshold voltage (VGEth) is 5.80 V at Tvj = 25°C, with a minimum of 5.20 V and a maximum of 6.40 V.