FS450R12OE4PBOSA1

FS450R12OE4PBOSA1

$345.37
  • Description:IGBT MOD 1200V 900A 20MW
  • Series:EconoPACK™+

SKU:e195e2aaeb9a Category: Brand:

  
  • Quantity
    • -
    • +
  •    
ChipApex WhatsApp

Consult the customer manager about the wholesale price.

consultation hotline:86-132-6715-2157

email:[email protected]
Contact the product manager for consultation. One-stop consultation is available.


Do you want a lower wholesale price? Please send us your inquiry and we will reply immediately.

Submitting!
Submission successful!
Submission failed!
Email error!
Phone number error!

Product Detailed Parameters

  • Description:IGBT MOD 1200V 900A 20MW
  • Series:EconoPACK™+
  • Mfr:Infineon Technologies
  • Package:Tray
  • IGBT Type:Trench Field Stop
  • Configuration:Full Bridge
  • Vce(on) (Max) @ Vge, Ic:2.1V @ 15V, 450A
  • Input:Standard
  • NTC Thermistor:Yes
  • Operating Temperature:-40°C ~ 150°C
  • Mounting Type:Chassis Mount
  • Package / Case:Module
  • Supplier Device Package:Module
  • Voltage - Collector Emitter Breakdown (Max):1200 V
  • Current - Collector (Ic) (Max):900 A
  • Power - Max:-
  • Current - Collector Cutoff (Max):3 mA
  • Input Capacitance (Cies) @ Vce:1.55 nF @ 25 V

Download product information

FS450R12OE4PBOSA1

Overview

The FS450R12OE4P is a six-pack IGBT module from Infineon Technologies, utilizing Trench/Fieldstop IGBT4 technology and an Emitter Controlled HE Diode. It features PressFIT contact technology with pre-applied thermal interface material. The collector-emitter voltage (VCES) is 1200 V, with a continuous DC collector current (IC nom) of 450 A at TH = 60°C and Tvj max = 175°C. The repetitive peak collector current (ICRM) is 900 A for tP = 1 ms. The typical collector-emitter saturation voltage (VCE sat) is 1.75 V at Tvj = 25°C, rising to 2.10 V at Tvj = 150°C. Gate-emitter peak voltage (VGES) is +/-20 V. The operating junction temperature range is -40°C to 150°C.

Feature Summary

  • High short-circuit capability and surge current robustness
  • Integrated NTC temperature sensor for monitoring
  • PressFIT connection technology eliminates soldering requirements
  • Pre-applied thermal interface material simplifies assembly

Applications

  • High power converters
  • Commercial agriculture vehicles
  • Motor drives
  • Solar applications
  • UPS systems

Procurement Notes

Verify the specific ordering suffix OE4P against official documentation to confirm the inclusion of PressFIT contacts and pre-applied TIM. Ensure that the procurement channel provides valid RoHS compliance certificates and datasheet version V3.0 or later. Confirm that the module serial number and datecode match the required production batch specifications.

Selection Notes

Select this module when high mechanical robustness and simplified assembly are required due to the PressFIT design. Consider the integrated NTC sensor if active thermal management is necessary. Verify that the application can accommodate the 1200 V rating and 450 A continuous current limits under the specified heatsink temperatures.

Part Context

This component belongs to the EconoPACK+ series featuring Trenchstop IGBT4 technology. It is designed as a six-pack inverter module. The 'E' indicates the integration of an Emitter Controlled HE Diode, while 'O' denotes the PressFIT terminal configuration. This distinguishes it from screw-mount variants within the same electrical family.

Replacement Considerations

FS450R12OE4PBOSA1

FAQ

What is the maximum baseplate operation temperature?

The maximum baseplate operation temperature (TBPmax) is 125 °C.

Does the module include an internal temperature sensor?

Yes, the module includes an integrated NTC temperature sensor with a rated resistance of 5.00 kΩ at 25°C.

What is the typical gate threshold voltage?

The typical gate threshold voltage (VGEth) is 5.80 V at Tvj = 25°C, with a minimum of 5.20 V and a maximum of 6.40 V.

FS450R12OE4PBOSA1FS450R12OE4PBOSA1
$345.37
Buy Now