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The FS450R17KE4BOSA1 is a six-pack IGBT module from Infineon's Trenchstop IGBT4 series, utilizing silicon technology. It features a collector-emitter voltage of 1700 V and a continuous DC collector current of 600 A at 25°C (450 A at 100°C). The module has a total power dissipation of 2500 W at 25°C, with a collector-emitter saturation voltage ranging from 1.95 V to 2.45 V depending on temperature. Operating junction temperatures range from -40°C to 150°C. Key electrical parameters include a gate charge of 4.60 µC, input capacitance of 36.0 nF, and an internal gate resistance of 1.7 Ω.
Verify the component against official datasheets to confirm technical specifications and compliance status. Check for specific ordering suffixes that may indicate variations in packaging or testing standards. Ensure compatibility with existing system requirements before finalizing procurement decisions.
Select this module based on its 1700 V rating and high current capacity suitable for demanding industrial applications. Consider the thermal resistance values and mounting torque specifications to ensure proper heat dissipation and mechanical stability within the target design constraints.
This component belongs to the Trenchstop IGBT4 family, specifically the EconoPACK+ line. It represents a generation of silicon-based modules designed for high-power density applications, offering improved efficiency compared to previous generations through advanced trench gate technology.
FS450R17KE4