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— IC芯片 | 连接器 | 传感器 | 被动器件 —
The FS450R17OE4BOSA1 is a six-pack IGBT module from Infineon's EconoPACK+ series, utilizing Trench/Fieldstop IGBT4 technology. It features an isolated base plate and PressFIT connection technology with an integrated NTC temperature sensor. The collector-emitter voltage (VCES) is rated at 1700 V. At a case temperature of 25°C, the continuous DC collector current (IC) reaches 630 A, while the nominal current (IC nom) at 90°C is 450 A. The repetitive peak collector current (ICRM) is 900 A. The typical collector-emitter saturation voltage (VCE sat) is 1.95 V at 25°C for 450 A. Total power dissipation is 2400 W at 25°C. Operating junction temperature ranges from -40°C to 150°C.
Verify the specific ordering suffix BOSA1 against official documentation to confirm exact configuration details. Ensure that the component matches the required technical specifications for your application before procurement. Cross-reference datasheet revision numbers to guarantee compatibility with existing designs.
Select this module for applications requiring high robustness and short-circuit tolerance. Consider the thermal resistance values when designing heatsinking solutions. Verify gate drive requirements align with the specified internal gate resistor and threshold voltages. Evaluate stray inductance impacts on switching performance.
This component belongs to the EconoPACK+ family featuring Trench/Fieldstop IGBT4 technology. It is designed for industrial applications demanding high reliability. The module integrates emitter-controlled diodes and utilizes PressFIT technology for mounting. It represents a standard solution for medium to high-power conversion systems.
FS450R17OE4P
The module supports a short-circuit time of up to 10 µs.
The rated resistance (R25) at 25°C is 5.00 kΩ.
The isolation test voltage is 3.4 kV RMS at 50 Hz for 1 minute.