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The FS500R17OE4DPBOSA1 is a six-pack IGBT module utilizing Trench/Fieldstop IGBT4 technology and Emitter Controlled 3 Diodes. It features PressFIT contact technology and pre-applied thermal interface material within an EconoPACK+ housing. The collector-emitter voltage (VCES) is rated at 1700 V, with a nominal continuous DC collector current (IC nom) of 500 A at TH = 50°C and Tvj max = 175°C. The repetitive peak collector current (ICRM) reaches 1000 A for a pulse duration of 1 ms. The typical collector-emitter saturation voltage (VCE sat) is 2.30 V at Tvj = 125°C. The integrated NTC thermistor has a rated resistance (R25) of 5.00 kΩ at 25°C.
Verify the exact ordering suffix against official Infineon documentation before procurement. Confirm that the specific BOSA1 designation matches the required manufacturing lot or compliance standard. Ensure the component is sourced from authorized channels to guarantee authenticity and traceability. Cross-reference the datasheet version to confirm technical specifications align with your design requirements.
Select this module for applications requiring high robustness and low switching losses. Verify that the operating junction temperature does not exceed 150°C during switching conditions. Ensure the gate drive circuit provides ±15 V and accounts for the internal gate resistor. Check that the mechanical mounting torque adheres to the specified limits for M5 and M6 screws to maintain proper electrical isolation and thermal contact.
This component belongs to the EconoPACK+ series featuring Trench/Fieldstop IGBT4 technology. It integrates emitter-controlled diodes to optimize reverse recovery characteristics. The module utilizes an isolated copper baseplate and offers high creepage and clearance distances. It is designed for industrial applications demanding high mechanical and electrical robustness.
Public confirmed substitute part numbers are not available in the provided source material.