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The FS50R06KE3BPSA1 is a six-pack IGBT module from Infineon Technologies, utilizing Trenchstop IGBT3 and Emitter Controlled3 diode technology. It features a collector-emitter voltage of 600 V and a continuous DC collector current of 50 A at 80°C case temperature. The typical collector-emitter saturation voltage is 1.45 V at 25°C, while the diode forward voltage is 1.55 V. The module includes an integrated NTC thermistor with a nominal resistance of 5 kΩ at 25°C. Total power dissipation reaches 190 W at 25°C. Key thermal resistances are 0.80 K/W for junction-to-case per IGBT and 1.20 K/W per diode.
Verify the specific ordering suffix BPSA1 against official documentation to confirm packaging and reel specifications. Ensure that the component matches the required industrial quality grade and check for RoHS compliance status as defined in the manufacturer's datasheet before finalizing procurement orders.
Select this module for applications requiring 600 V blocking capability and up to 50 A continuous current. Evaluate the thermal resistance values to ensure adequate heatsinking for the intended power dissipation. Confirm that the gate drive requirements align with the specified threshold voltages and charge parameters for optimal switching performance.
This component belongs to the EconoPACK3 series, designed for compact integration in modern power electronics. It utilizes Infineon's Trenchstop IGBT3 technology combined with Emitter Controlled3 diodes to balance switching speed and conduction losses effectively for medium-power industrial applications.
Consult official replacement lists for updated versions or alternative packages within the same voltage and current class. Verify pin compatibility and thermal characteristics when considering substitutes from other manufacturers or different series within the same product family.
The module can withstand a short circuit for up to 8 µs at 25°C junction temperature and 6 µs at 150°C junction temperature.
Yes, it integrates an NTC thermistor with a nominal resistance of 5 kΩ at 25°C for accurate temperature monitoring.
At a junction temperature of 150°C, the typical turn-off energy loss is 1.70 mJ under standard test conditions.