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— IC芯片 | 连接器 | 传感器 | 被动器件 —
The FS50R06W1E3_B11 is a Trenchstop IGBT3 module with an integrated Emitter Controlled 3 diode, housed in the EasyPACK package. It features PressFIT connection technology and an embedded NTC thermistor for thermal monitoring. The collector-emitter voltage (VCES) is rated at 600 V, with a continuous DC collector current of 50 A at 90°C case temperature. The saturation voltage (VCEsat) is typically 1.45 V at 25°C junction temperature. Total power dissipation reaches 205 W at 25°C. The operating junction temperature range spans from -40°C to +150°C.
Verify the specific ordering suffix B11 against official Infineon documentation to confirm the inclusion of PressFIT terminals and NTC integration. Ensure that the selected variant matches the required terminal configuration and internal components before finalizing procurement orders.
Select this component for applications requiring 600 V blocking capability and up to 50 A continuous current. Consider the 205 W total power dissipation limit and the -40°C to +150°C operating temperature range when designing the thermal management system. Verify compatibility with the EasyPACK footprint and PressFIT assembly requirements.
This module belongs to the EasyPACK family utilizing Trenchstop IGBT3 technology. It is designed as a single inverter leg solution. The product line emphasizes high power density and rugged mounting through its integrated clamps and Al2O3 substrate construction.
Consult official Infineon cross-reference lists for verified substitutes. Do not assume functional equivalence based solely on voltage and current ratings.
The maximum repetitive peak collector current (ICRM) is 100 A for a pulse duration of 1 ms.
The isolation test voltage (VISOL) is 2.5 kV RMS at 50 Hz for one minute.
The gate threshold voltage (VGEth) ranges from a minimum of 4.9 V to a maximum of 6.5 V at a junction temperature of 25°C.