FS50R12KT4B11BOSA1

$57.14

Description：IGBT MOD 1200V 50A 280W
Series：EconoPACK™ 2

SKU:6d14e0c13dbd Category: IGBT Modules Brand: Infineon Technologies

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Product introduction

Product Detailed Parameters

Description：IGBT MOD 1200V 50A 280W
Series：EconoPACK™ 2
Mfr：Infineon Technologies
Package：Bulk,Tray
IGBT Type：Trench Field Stop
Configuration：Full Bridge
Vce(on) (Max) @ Vge, Ic：2.15V @ 15V, 50A
Input：Standard
NTC Thermistor：Yes
Operating Temperature：-40°C ~ 150°C
Mounting Type：Chassis Mount
Package / Case：Module
Supplier Device Package：Module
Voltage - Collector Emitter Breakdown (Max)：1200 V
Current - Collector (Ic) (Max)：50 A
Power - Max：280 W
Current - Collector Cutoff (Max)：1 mA
Input Capacitance (Cies) @ Vce：2.8 nF @ 25 V

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FS50R12KT4B11BOSA1

Overview

The FS50R12KT4B11BOSA1 is a Trenchstop IGBT4 and Emitter Controlled 4 Diode module in the EconoPACK2 housing. It features PressFIT connection technology and an integrated NTC temperature sensor. The collector-emitter voltage (VCES) is 1200 V, with a continuous DC collector current (IC nom) of 50 A at TC = 95°C and a repetitive peak collector current (ICRM) of 100 A. The total power dissipation (Ptot) is 280 W at TC = 25°C. The gate-emitter peak voltage (VGES) is +/-20 V. The typical collector-emitter saturation voltage (VCEsat) is 2.15 V at Tvj = 125°C for IC = 50 A. The operating junction temperature range is -40 to 150 °C.

Feature Summary

Trench/Fieldstop IGBT4 technology combined with Emitter Controlled 4 diode architecture
PressFIT contact technology for robust mechanical and electrical connections
Integrated NTC temperature sensor for thermal monitoring
Al2O3 substrate providing low thermal resistance and high cycling capability

Applications

Auxiliary inverters
Motor drives
Servo drives

Procurement Notes

Verify the exact ordering suffix against the manufacturer's official documentation to ensure correct configuration. Confirm that the component utilizes PressFIT termination rather than standard screw mounting. Cross-reference the specific revision level to match design requirements. Ensure compliance with RoHS directives as indicated in the datasheet.

Selection Notes

Select this module for applications requiring a 1200 V rating and 50 A continuous current capacity. Consider the positive temperature coefficient of VCEsat for parallel operation stability. Evaluate the thermal resistance values to determine appropriate heatsinking solutions. Verify that the system can accommodate the PressFIT assembly process instead of traditional screw terminals.

Part Context

This component belongs to Infineon's Trenchstop IGBT4 series, utilizing advanced trench gate technology for optimized switching losses. The EconoPACK2 housing provides a compact form factor suitable for space-constrained industrial designs. The integration of Emitter Controlled diodes enhances reverse recovery characteristics compared to standard fast recovery diodes.