FET, MOSFET Arrays FS55MR12W1M1HB11NPSA1 product image

FS55MR12W1M1HB11NPSA1

$52.23
  • Description:MOSFET 6N-CH 1200V 15A AG-EASY1B
  • Series:EasyPACK™, CoolSiC™

SKU:6ac21c0f0143 Category: Brand:

  
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FS55MR12W1M1HB11NPSA1 is listed in the FET, MOSFET Arrays range at ChipApex. The manufacturer field lists Infineon Technologies. Its product description is MOSFET 6N-CH 1200V 15A AG-EASY1B. Review the specifications below when checking this part for your BOM.

FET, MOSFET Arrays specifications for FS55MR12W1M1HB11NPSA1

  • Description:MOSFET 6N-CH 1200V 15A AG-EASY1B
  • Series:EasyPACK™, CoolSiC™
  • Mfr:Infineon Technologies
  • Package:Tray
  • Technology:Silicon Carbide (SiC)
  • Configuration:6 N-Channel (Full Bridge)
  • FET Feature:-
  • Drain to Source Voltage (Vdss):1200V (1.2kV)
  • Current - Continuous Drain (Id) @ 25°C:15A (Tj)
  • Rds On (Max) @ Id, Vgs:79mOhm @ 15A, 18V
  • Vgs(th) (Max) @ Id:5.15V @ 6mA
  • Gate Charge (Qg) (Max) @ Vgs:45nC @ 18V
  • Input Capacitance (Ciss) (Max) @ Vds:1350pF @ 800V
  • Power - Max:-
  • Operating Temperature:-40°C ~ 175°C (TJ)
  • Mounting Type:Chassis Mount
  • Package / Case:Module
  • Supplier Device Package:AG-EASY1B
  • Grade:-
  • Qualification:-

FET, MOSFET Arrays datasheet and documents for FS55MR12W1M1HB11NPSA1

FS55MR12W1M1HB11NPSA1

FET, MOSFET Arrays Overview

The FS55MR12W1M1HB11NPSA1 is a CoolSiC Trench MOSFET half-bridge module in the EasyPACK™ package. It features a 1200 V drain-source voltage and a continuous DC drain current of 15 A at 175 °C, with a repetitive peak current of 30 A. The typical on-state resistance is 79 mΩ at 25 °C. The module integrates an NTC thermistor for thermal monitoring and utilizes PressFIT contact technology.

FET, MOSFET Arrays Feature Summary

  • Low inductive design for high-frequency switching applications
  • Integrated mounting clamps for rugged mechanical stability
  • PressFIT contact technology for reliable electrical connection
  • Built-in NTC temperature sensor for thermal management

FET, MOSFET Arrays Applications

  • High-frequency switching applications
  • DC/DC converters
  • Motor drives
  • UPS systems

FET, MOSFET Arrays Procurement Notes

Verify that the specific ordering suffix matches the required configuration. Confirm compliance with IEC 60747, 60749, and 60068 standards for industrial application validation. Ensure gate voltage selections align with recommended operating guidelines to maintain long-term device reliability.

FET, MOSFET Arrays Selection Notes

Select this component for designs requiring low switching losses and high power density. Consider the 15 A continuous current rating and 1200 V blocking capability when sizing the system. Evaluate the thermal resistance and integrated NTC sensor requirements for effective heat dissipation and temperature monitoring strategies.

FET, MOSFET Arrays Part Context

This part belongs to Infineon's CoolSiC™ M1H series, utilizing advanced trench MOSFET technology within the EasyPACK™ form factor. The series targets high-efficiency power conversion by leveraging silicon carbide material properties for superior thermal and electrical performance compared to traditional silicon devices.

FET, MOSFET Arrays Replacement Considerations

Consult official documentation for confirmed substitutes. Verify pinout compatibility and electrical ratings before replacing existing components in established designs.

FET, MOSFET Arrays FAQ

What is the maximum operating junction temperature?

The maximum operating junction temperature (Tvj op) is 175 °C.

Does the module include a temperature sensor?

Yes, the module includes an integrated NTC thermistor with a rated resistance of 5 kΩ at 25 °C.

What contact technology does the module use?

The module uses PressFIT contact technology for connecting to the circuit board.

FS55MR12W1M1HB11NPSA1FS55MR12W1M1HB11NPSA1
$52.23
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