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FS55MR12W1M1HB11NPSA1 is listed in the FET, MOSFET Arrays range at ChipApex. The manufacturer field lists Infineon Technologies. Its product description is MOSFET 6N-CH 1200V 15A AG-EASY1B. Review the specifications below when checking this part for your BOM.
The FS55MR12W1M1HB11NPSA1 is a CoolSiC Trench MOSFET half-bridge module in the EasyPACK™ package. It features a 1200 V drain-source voltage and a continuous DC drain current of 15 A at 175 °C, with a repetitive peak current of 30 A. The typical on-state resistance is 79 mΩ at 25 °C. The module integrates an NTC thermistor for thermal monitoring and utilizes PressFIT contact technology.
Verify that the specific ordering suffix matches the required configuration. Confirm compliance with IEC 60747, 60749, and 60068 standards for industrial application validation. Ensure gate voltage selections align with recommended operating guidelines to maintain long-term device reliability.
Select this component for designs requiring low switching losses and high power density. Consider the 15 A continuous current rating and 1200 V blocking capability when sizing the system. Evaluate the thermal resistance and integrated NTC sensor requirements for effective heat dissipation and temperature monitoring strategies.
This part belongs to Infineon's CoolSiC™ M1H series, utilizing advanced trench MOSFET technology within the EasyPACK™ form factor. The series targets high-efficiency power conversion by leveraging silicon carbide material properties for superior thermal and electrical performance compared to traditional silicon devices.
Consult official documentation for confirmed substitutes. Verify pinout compatibility and electrical ratings before replacing existing components in established designs.
The maximum operating junction temperature (Tvj op) is 175 °C.
Yes, the module includes an integrated NTC thermistor with a rated resistance of 5 kΩ at 25 °C.
The module uses PressFIT contact technology for connecting to the circuit board.
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