ChipApex | Global Electronic Components Supplier
SEARCH
Search Product
Search Post
— IC芯片 | 连接器 | 传感器 | 被动器件 —
Consult the customer manager about the wholesale price.
consultation hotline：86-132-6715-2157
email：[email protected]
Contact the product manager for consultation. One-stop consultation is available.
Do you want a lower wholesale price? Please send us your inquiry and we will reply immediately.
Product Detailed Parameters
- Description：IGBT MODULE 650V 75A 250W
- Series：EconoPACK™ 2
- Mfr：Infineon Technologies
- Package：Tray
- IGBT Type：Trench Field Stop
- Configuration：Three Phase Inverter
- Vce(on) (Max) @ Vge, Ic：1.95V @ 15V, 75A
- Input：Standard
- NTC Thermistor：Yes
- Operating Temperature：-40°C ~ 150°C
- Mounting Type：Chassis Mount
- Package / Case：Module
- Supplier Device Package：Module
- Voltage - Collector Emitter Breakdown (Max)：650 V
- Current - Collector (Ic) (Max)：75 A
- Power - Max：250 W
- Current - Collector Cutoff (Max)：1 mA
- Input Capacitance (Cies) @ Vce：4.6 nF @ 25 V
Download product information
Overview
The FS75R07N2E4BOSA1 is a Trench/Fieldstop IGBT4 and Emitter Controlled 4 diode module in the EconoPACK™2 housing. It features an integrated NTC temperature sensor and a copper base plate. The collector-emitter voltage (VCES) is rated at 650 V, with a continuous DC collector current (IC nom) of 75 A at TC = 70°C and a repetitive peak collector current (ICRM) of 150 A. The typical collector-emitter saturation voltage (VCE sat) is 1.55 V at Tvj = 25°C. Total power dissipation is 250 W at TC = 25°C. The junction-to-case thermal resistance is 0.60 K/W for the IGBT and 0.95 K/W for the diode.
Feature Summary
- High short circuit capability with self-limiting short circuit current
- Increased blocking voltage capability up to 650 V
- Integrated NTC temperature sensor for thermal monitoring
- Solder contact technology with copper base plate
Applications
- Motor drives
Procurement Notes
Verify the exact ordering suffix against official Infineon documentation to confirm package type and specific variant details. Confirm RoHS compliance status and REACH SVHC declarations through authorized distributors or the manufacturer's material content data sheets before procurement.
Selection Notes
Select this component for applications requiring a 650 V rating and 75 A continuous current handling. Ensure the gate drive circuit supports the specified VGE parameters and that the thermal management system can maintain the junction temperature within the -40°C to 150°C operating range under expected load conditions.
Part Context
This part belongs to the Infineon Trenchstop IGBT4 series utilizing Emitter Controlled 4 diode technology. It is housed in the standard EconoPACK™2 module format, designed for industrial power conversion applications where high reliability and robust short-circuit performance are required.
Replacement Considerations
Consult official Infineon cross-reference documents for verified substitutes. Direct replacements must match the 650 V / 75 A rating, EconoPACK™2 footprint, and pinout configuration to ensure mechanical and electrical compatibility without redesigning the PCB layout.
FAQ
What is the maximum repetitive peak reverse voltage for the integrated diode?
The repetitive peak reverse voltage (VRRM) for the diode is rated at 650 V.
What is the isolation test voltage for this module?
The isolation test voltage (VISOL) is 2.5 kV RMS at 50 Hz for 1 minute.
What is the typical B-value for the integrated NTC thermistor?
The typical B-value (B25/50) for the NTC thermistor is 3375 K.
