SEARCH
— IC芯片 | 连接器 | 传感器 | 被动器件 —
The FS75R07N2E4BPSA1 is a Trench/Fieldstop IGBT4 and Emitter Controlled 4 diode module in an EconoPACK™2 housing. It features a collector-emitter voltage (VCES) of 650 V, a continuous DC collector current (IC nom) of 75 A at TC = 70°C, and a repetitive peak collector current (ICRM) of 150 A. The typical collector-emitter saturation voltage (VCE sat) is 1.55 V at Tvj = 25°C. Total power dissipation (Ptot) is 250 W at TC = 25°C. The module includes an integrated NTC temperature sensor with a rated resistance (R25) of 5 kΩ at 25°C.
Verify the exact ordering suffix against official Infineon documentation to confirm package type and terminal configuration. Confirm RoHS compliance status and REACH SVHC declarations prior to procurement. Ensure the component matches the specific revision level required by your design specifications.
Select this module for applications requiring a 650 V blocking voltage and up to 75 A continuous current. Consider the 0.60 K/W junction-to-case thermal resistance for heatsink calculations. Verify that the gate drive circuitry supports the specified ±20 V peak gate-emitter voltage limits.
This component belongs to the EconoPACK™2 series utilizing Trench/Fieldstop IGBT4 technology. It is designed as a standard housing module with a copper base plate. The product line emphasizes high short-circuit robustness and integrated thermal sensing capabilities for industrial power conversion systems.
Consult official Infineon cross-reference documents for verified substitutes. Ensure any replacement maintains identical pinout, thermal resistance characteristics, and electrical ratings within the EconoPACK™2 form factor.
The module supports a short-circuit time (tP) of up to 10 µs.
The isolation test voltage (VISOL) is 2.5 kV RMS at 50 Hz for 1 minute.
The internal gate resistance (RGint) is 0 Ω at Tvj = 25°C.