FS75R12KE3BOSA1

Overview

The FS75R12KE3BOSA1 is an IGBT module featuring a 1200 V collector-emitter voltage rating and a continuous collector current of 75 A at Tc=80°C. It integrates a fast recovery diode with a repetitive peak forward current of 150 A. The device exhibits a typical collector-emitter saturation voltage of 1.7 V at 75 A and 25°C, rising to 2.15 V at 125°C. Switching characteristics include a turn-on delay of 0.26 µs and a fall time of 0.03 µs at 600 V. Thermal management relies on a junction-to-case resistance of 0.35 K/W, supporting a maximum junction temperature of 150°C.

Feature Summary

• Integrates an IGBT transistor and a complementary fast recovery diode within a single insulated package.
• Features a robust short-circuit capability allowing operation for up to 10 µs under specified conditions.
• Includes an integrated NTC thermistor for precise thermal monitoring and protection.

Applications

• Industrial motor drives and inverter systems
• High-frequency power supply circuits
• Uninterruptible power supply (UPS) units

Procurement Notes

Verify the specific ordering suffix BOSA1 against the manufacturer's current catalog to confirm packaging and reel specifications. Ensure the component matches the exact datasheet revision referenced in technical documentation. Cross-reference part numbers with authorized distributors to avoid counterfeit components. Confirm that the insulation test voltage and creepage distances meet the safety requirements of the target application environment.

Selection Notes

Select this module based on the required 1200 V blocking voltage and 75 A continuous current capacity. Evaluate the thermal resistance of 0.35 K/W to design an appropriate heatsinking solution. Consider the switching energy losses shown in the characteristic curves when determining gate resistor values. Ensure the operating junction temperature remains within the -40°C to 150°C range for reliable performance.

Part Context

This component belongs to the FS75R12KE3 series of IGBT modules manufactured by Infineon Technologies. The series is designed for medium-power applications requiring high efficiency and reliability. The module utilizes advanced semiconductor technology to minimize conduction and switching losses while maintaining robust electrical isolation between terminals.

Replacement Considerations

Consult official substitution lists for compatible IGBT modules with matching voltage and current ratings. Verify pin compatibility and thermal interface dimensions before replacing the original component. Ensure that any substitute part meets the same insulation test voltage and mechanical mounting requirements.

FAQ

What is the maximum short-circuit time for this module?

The module supports a short-circuit time of up to 10 µs under conditions where VGE ≤ 15V and Tvj ≤ 125°C.

How does the collector-emitter saturation voltage vary with temperature?

At 75 A, the typical VCEsat increases from 1.7 V at 25°C to 2.15 V at 125°C.

What is the reverse recovery charge of the integrated diode?

The recovered charge (Qr) is typically 9.5 µC at 25°C and 13.5 µC at 125°C, measured at VR=600V and VGE=-15V.