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Product Detailed Parameters
- Description：IGBT MOD 1200V 100A 500W
- Series：-
- Mfr：Infineon Technologies
- Package：Tray
- IGBT Type：-
- Configuration：Three Phase Inverter
- Vce(on) (Max) @ Vge, Ic：3.7V @ 15V, 75A
- Input：Standard
- NTC Thermistor：No
- Operating Temperature：-40°C ~ 125°C
- Mounting Type：Chassis Mount
- Package / Case：Module
- Supplier Device Package：Module
- Voltage - Collector Emitter Breakdown (Max)：1200 V
- Current - Collector (Ic) (Max)：100 A
- Power - Max：500 W
- Current - Collector Cutoff (Max)：5 mA
- Input Capacitance (Cies) @ Vce：5.1 nF @ 25 V
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Overview
The FS75R12KS4 is a four-pack IGBT module manufactured by Infineon Technologies. It features a collector-emitter voltage of 1200 V and a continuous DC collector current of 75 A at 70°C case temperature, or 100 A at 25°C. The total power dissipation is rated at 500 W. The module incorporates an integrated NTC thermistor for thermal monitoring. Electrical characteristics include a typical collector-emitter saturation voltage of 3.2 V at 25°C and a forward diode voltage of 2.0 V at 25°C. The operating junction temperature range spans from -40°C to 125°C.
Feature Summary
- Four-pack topology integrating four IGBTs and four freewheeling diodes in a single industrial package.
- Integrated NTC thermistor enables precise real-time junction temperature monitoring.
- Designed for robust operation with high short-circuit withstand capability up to 450 A.
Applications
- Industrial motor drives
- Induction heating systems
- Uninterruptible power supplies (UPS)
Procurement Notes
Verify the specific ordering suffix against official documentation to confirm exact configuration details. Ensure that the procurement channel provides valid traceability and authenticity certificates. Confirm RoHS compliance status through the manufacturer's latest environmental declaration before finalizing orders.
Selection Notes
Evaluate the thermal resistance from junction to case, which is 0.25 K/W per IGBT, to determine appropriate heatsinking requirements. Consider the module stray inductance of 28 nH when designing gate drive circuits to minimize switching overshoot. Verify that the application voltage does not exceed the 1200 V rating under all transient conditions.
Part Context
This component belongs to the FS series of IGBT modules from Infineon Technologies. It utilizes IGBT2 technology optimized for industrial applications. The module is housed in an EconoPACK™ 2 package, providing a compact form factor suitable for space-constrained power electronics designs requiring high current density.
Replacement Considerations
Publicly confirmed substitute part numbers are not available in the provided source material. Cross-referencing requires consulting official Infineon replacement guides or distributor compatibility matrices to ensure electrical and mechanical equivalence.
