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The FS75R12KT3BOSA1 is a silicon IGBT module from Infineon Technologies, belonging to the Trenchstop IGBT3 (T3) series. It features a six-pack configuration housed in an EconoPACK™ 2 package with screw mount installation. The device supports a maximum collector-emitter voltage of 1.2 kV and a continuous collector current of 75 A at 25°C. Key electrical parameters include a collector-emitter saturation voltage of 1.7 V and a power dissipation rating of 350 W. The module operates within a junction temperature range of -40°C to +150°C and includes an integrated NTC thermistor for thermal monitoring.
Verify the specific ordering suffix BOSA1 against official Infineon documentation to confirm environmental compliance and marking details. Ensure compatibility with existing PCB layouts and cooling solutions before procurement. Cross-reference the part number alias SP005422392 if sourcing through alternative distributors to maintain traceability.
Select this module for applications requiring 1.2 kV blocking capability and moderate current handling up to 75 A. The Trenchstop technology offers a balance between switching speed and conduction losses. Consider the 350 W power dissipation limit when designing the thermal management system to ensure operation within the specified junction temperature range.
This component is part of Infineon's Trenchstop IGBT3 family, which utilizes field-stop technology to optimize performance. The EconoPACK™ 2 series is widely used in industrial power electronics due to its low parasitic inductance and efficient thermal path. The FS75R12KT3BOSA1 serves as a standard solution for mid-power conversion tasks.
FS75R12KE3BPSA1 is listed as a parameter-equivalent alternative.