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The FS75R12W2T4B11BOMA1 is a six-pack IGBT module from Infineon Technologies, utilizing Trench/Fieldstop IGBT4 technology and Emitter Controlled 4 diodes. It features PressFIT connection technology and an integrated NTC thermistor within the EasyPACK package. The module supports a collector-emitter voltage of 1200 V with a nominal continuous DC collector current of 75 A at 95°C case temperature. Key electrical parameters include a maximum repetitive peak collector current of 150 A, a typical collector-emitter saturation voltage of 1.85 V at 25°C, and a total power dissipation of 375 W. The operating junction temperature range spans from -40°C to 150°C.
Verify component authenticity through official Infineon channels or authorized distributors. Confirm that the ordering suffix matches the specific technical requirements, as variations may exist. Ensure compliance with RoHS directives and check for any specific handling instructions related to the PressFIT termination style during assembly.
Select this module for applications requiring high reliability and compact design in medium-power inverters. Consider the thermal resistance values when designing heatsinking solutions. Evaluate the gate charge and internal gate resistor specifications to optimize driver circuit performance for the desired switching frequency and loss profile.
This component belongs to the EasyPACK series of IGBT modules, designed for industrial and automotive applications. It represents the fourth generation of Trench Fieldstop technology, offering improved switching characteristics compared to previous iterations. The module integrates both IGBTs and diodes in a single six-pack configuration for three-phase inverter applications.
Consult official Infineon documentation for qualified replacement parts. Verify pin compatibility and thermal characteristics before substitution. Cross-reference datasheets to ensure equivalent voltage, current, and switching performance metrics are met.