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The FS75R12W2T4PB11BPSA1 is a silicon IGBT module from Infineon Technologies, belonging to the EconoPACK™ 2 series. It features a six-pack configuration with a maximum collector-emitter voltage of 1200 V and a continuous collector current of 75 A at 25°C. The typical saturation voltage is 1.55 V, while the anti-parallel diode forward voltage is 1.72 V. Operating within a junction temperature range of -40°C to +175°C, it utilizes press-fit mounting technology for secure installation.
Verify the complete part number against official Infineon documentation to ensure correct suffix identification. Confirm that the specific revision matches project requirements, as ordering suffixes may indicate variations in internal components or packaging without altering core electrical ratings. Cross-reference datasheet SP005147302 for final validation before procurement.
Select this component for applications requiring robust 1200 V blocking capability and high current density in a compact footprint. The press-fit interface is suitable for designs prioritizing mechanical reliability and simplified assembly processes over traditional screw mounting. Ensure thermal management solutions align with the module's specified operating temperature limits.
This module is part of Infineon's EconoPACK™ 2 family, designed for industrial power conversion. It succeeds earlier generations by offering improved power density and reliability through advanced trench gate technology. The six-pack topology integrates three IGBTs and three anti-parallel diodes into a single package for efficient three-phase inverter implementations.
Direct replacements include FS75R12W2T7PB11BPSA1, which offers updated Trenchstop™ 7 technology with similar electrical characteristics but potentially different switching behavior. Designers must verify pin compatibility and thermal interface requirements when substituting between different technology generations within the same package size.