FS75R12W2T7B11BOMA1

Overview

The FS75R12W2T7B11BOMA1 is a six-pack IGBT module from Infineon Technologies, utilizing TRENCHSTOP™ IGBT7 technology and Emitter Controlled 7 diodes. It features PressFIT connection technology and an integrated NTC thermistor. The collector-emitter voltage (VCES) is rated at 1200 V, with a nominal implemented collector current (ICN) of 75 A and a continuous DC collector current (ICDC) of 65 A at TH = 65°C. The repetitive peak collector current (ICRM) reaches 150 A for 1 ms pulses. At Tvj = 25°C, the typical collector-emitter saturation voltage (VCEsat) is 1.55 V, while the diode forward voltage (VF) is 1.72 V. The module operates within a junction temperature range of -40°C to 175°C.

Feature Summary

• Integrates TRENCHSTOP™ IGBT7 and Emitter Controlled 7 diodes for high controllability and reduced switching losses.
• Features PressFIT contact technology for robust mechanical connection without soldering.
• Includes an integrated NTC thermistor for precise thermal monitoring.
• Utilizes an Al2O3 substrate with low thermal resistance for efficient heat dissipation.

Applications

• Auxiliary inverters
• Air conditioning systems
• Motor drives
• Servo drives
• UPS systems

Procurement Notes

Verify the specific ordering suffix BOMA1 against official documentation to confirm exact configuration details. Ensure compatibility with PressFIT mounting tools and verify that the application environment supports the specified overload operation up to 175°C as defined in relevant application notes.

Selection Notes

Select this module for applications requiring high power density and compact design. Consider the 2.5 kV AC insulation capability and the specific thermal resistance values when designing heatsinking solutions. Verify gate drive requirements against the internal gate resistor and recommended external resistances for optimal switching performance.

Part Context

This component belongs to the EasyPACK™ series, designed for industrial power electronics. It represents the seventh generation of TRENCHSTOP™ IGBT technology, offering improved short-circuit ruggedness and lower on-state voltage compared to previous generations. The module is intended for use in variable speed drives and other moderate switching frequency applications.

Replacement Considerations

Consult official replacement guides for direct substitutes. Modules with similar ratings such as FF75R12W1T7EB11BPSA1 may share packaging but differ in configuration or mounting style. Always verify electrical parameters and mechanical dimensions before substitution.

FAQ

What is the maximum short-circuit time allowed for this module?

The module can withstand a short circuit for a maximum duration of 8 µs at Tvj = 150°C and 7 µs at Tvj = 175°C, provided VGE ≤ 15 V and VCC = 800 V.

How does the module handle overload conditions?

Operation at a junction temperature above 150°C is permitted under overload conditions. Detailed specifications for these conditions are provided in application note AN 2018-14.

What is the isolation test voltage rating?

The module has an isolation test voltage (VISOL) of 2.5 kV RMS for 1 minute at 50 Hz.