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Product Detailed Parameters
- Description：IGBT MOD 1700V 130A 465W
- Series：-
- Mfr：Infineon Technologies
- Package：Tray
- IGBT Type：-
- Configuration：Full Bridge
- Vce(on) (Max) @ Vge, Ic：2.45V @ 15V, 75A
- Input：Standard
- NTC Thermistor：Yes
- Operating Temperature：-40°C ~ 125°C
- Mounting Type：Chassis Mount
- Package / Case：Module
- Supplier Device Package：Module
- Voltage - Collector Emitter Breakdown (Max)：1700 V
- Current - Collector (Ic) (Max)：130 A
- Power - Max：465 W
- Current - Collector Cutoff (Max)：5 mA
- Input Capacitance (Cies) @ Vce：6.8 nF @ 25 V
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Overview
The FS75R17KE3BOSA1 is a single IGBT inverter module from Infineon Technologies, utilizing Trench/Fieldstop IGBT3 technology. It features a collector-emitter voltage of 1700 V and a continuous DC collector current of 75 A at 80°C case temperature. The integrated anti-parallel diode supports a forward current of 75 A. Key electrical parameters include a maximum collector-emitter saturation voltage of 2.45 V and a gate-emitter peak voltage of ±20 V. The module incorporates an NTC thermistor with a nominal resistance of 5 kΩ at 25°C for thermal monitoring. Total power dissipation is rated at 465 W at 25°C case temperature.
Feature Summary
- Integrates Trench/Fieldstop IGBT3 technology for optimized switching performance.
- Includes an integrated NTC thermistor for precise junction temperature monitoring.
- Features a copper baseplate to facilitate efficient heat transfer to the heatsink.
Applications
- Industrial motor drives
- Uninterruptible power supplies (UPS)
- Induction heating systems
Procurement Notes
Verify component authenticity through official manufacturer channels or authorized distributors. Confirm that the received part matches the specific ordering code FS75R17KE3BOSA1. Ensure compliance with RoHS directives and check for any specific handling requirements during storage and assembly to maintain device integrity.
Selection Notes
Select this module for applications requiring high voltage blocking capability up to 1700 V. Consider the thermal resistance values when designing the cooling system. Verify that the gate drive circuitry can accommodate the specified peak voltage limits and internal gate resistance characteristics for stable operation.
Part Context
This component belongs to the EconoPACK family of modules designed for compact power conversion solutions. It utilizes silicon-based semiconductor technology within a standardized housing format. The module integrates both the switching element and the freewheeling diode into a single unit for simplified circuit design.
Replacement Considerations
Consult official documentation for direct substitutes. Cross-referencing requires matching voltage ratings, current capabilities, and package dimensions to ensure mechanical and electrical compatibility in existing designs.
