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FTD2015-TL-E is listed in the FET, MOSFET Arrays range at ChipApex. The manufacturer field lists onsemi. Its product description is NCH+NCH 4V DRIVE SERIES. Review the specifications below when checking this part for your BOM.
FET, MOSFET Arrays specifications for FTD2015-TL-E
- Description：NCH+NCH 4V DRIVE SERIES
- Series：*
- Mfr：onsemi
- Package：Bulk
- Technology：-
- Configuration：-
- FET Feature：-
- Drain to Source Voltage (Vdss)：-
- Current - Continuous Drain (Id) @ 25°C：-
- Rds On (Max) @ Id, Vgs：-
- Vgs(th) (Max) @ Id：-
- Gate Charge (Qg) (Max) @ Vgs：-
- Input Capacitance (Ciss) (Max) @ Vds：-
- Power - Max：-
- Operating Temperature：-
- Mounting Type：-
- Package / Case：-
- Supplier Device Package：-
- Grade：-
- Qualification：-
FET, MOSFET Arrays datasheet and documents for FTD2015-TL-E
FET, MOSFET Arrays Overview
The FTD2015-TL-E is a dual N-channel MOSFET array manufactured by onsemi, housed in a surface-mount SOT-363 package. It features a low gate threshold voltage optimized for 4V drive applications, enabling efficient switching with standard logic levels. The device integrates two independent N-channel transistors within a single compact footprint, designed to minimize board space while maintaining robust electrical performance for power management and signal switching tasks.
FET, MOSFET Arrays Feature Summary
- Dual N-channel configuration integrated into a single compact surface-mount package
- Optimized gate threshold voltage specifically designed for efficient 4V drive operation
- Independent channel isolation supporting flexible circuit topology implementation
FET, MOSFET Arrays Applications
- Low-voltage DC-DC converter circuits requiring compact dual-switch solutions
- Battery-powered portable electronics utilizing 4V logic interface standards
- General-purpose signal switching and load control in consumer devices
FET, MOSFET Arrays Procurement Notes
Verify the specific suffix TL-E against the official datasheet to confirm tape-and-reel packaging specifications and quantity per reel. Ensure the ordering part number matches the exact pinout and thermal characteristics required for your PCB layout. Cross-reference the manufacturer's latest release notes to confirm availability status and any potential lifecycle changes before finalizing procurement plans.
FET, MOSFET Arrays Selection Notes
Select this component when a dual N-channel MOSFET solution is required for 4V drive systems. Evaluate the total on-resistance and gate charge parameters against your efficiency targets. Consider the SOT-363 package dimensions for spatial constraints. Verify that the maximum drain-source voltage and continuous current ratings exceed your peak operational requirements under all thermal conditions.
FET, MOSFET Arrays Part Context
This component belongs to onsemi's discrete transistor portfolio, specifically within the MOSFET arrays category. It complements the company's broader range of power management and switching devices. The product line focuses on providing high-density solutions for modern electronic designs where space optimization and low-power operation are critical design drivers.
FET, MOSFET Arrays Replacement Considerations
Consult the official cross-reference list for verified substitutes. Ensure any alternative maintains identical pinout compatibility and electrical ratings. Verify package dimensions match existing footprints. Confirm that replacement parts meet the same 4V drive optimization criteria without requiring circuit redesign.
Explore related parts through FETs, MOSFETs, Transistors, Discrete Semiconductor Products, all product categories.
