FW276-TL-2H

FET, MOSFET Arrays Overview

The FW276-TL-2H is a dual N-channel silicon MOSFET manufactured by onsemi, housed in an SOIC-8 surface-mount package. It features a drain-source breakdown voltage (Vds) of 450 V and a continuous drain current (Id) of 700 mA. The device exhibits a maximum on-resistance (Rds(on)) of 12.1 Ohms and a gate threshold voltage (Vgs(th)) of 4.5 V. Operating within a temperature range of -55°C to +150°C, it dissipates up to 1.6 W of power. Key switching parameters include a gate charge (Qg) of 3.7 nC, with rise and fall times of 10 ns and 46 ns respectively.

FET, MOSFET Arrays Feature Summary

• Dual configuration integrating two independent N-channel MOSFETs into a single compact package for space-constrained designs.
• High-voltage capability supporting 450 V drain-source breakdown for robust operation in demanding electrical environments.
• Silicon technology construction ensuring reliable performance across extended industrial temperature ranges.

FET, MOSFET Arrays Applications

• High-voltage switching circuits requiring dual channel isolation
• Power management modules utilizing surface-mount integration
• Industrial control systems operating under extreme thermal conditions

FET, MOSFET Arrays Procurement Notes

Verify component authenticity through authorized distribution channels due to the discontinued status indicated in public records. Confirm RoHS compliance documentation matches specific manufacturing lot requirements. Ensure storage conditions adhere to moisture sensitivity level guidelines to prevent package degradation prior to assembly. Cross-reference ordering suffixes with official datasheets to confirm pinout and electrical specifications remain unchanged.

FET, MOSFET Arrays Selection Notes

Select this component when dual high-voltage switching is required in a small form factor. The 450 V rating suits applications exceeding standard low-voltage limits. Consider the 12.1 Ohm on-resistance for efficiency calculations at lower current levels. Evaluate the 700 mA continuous current limit against peak load demands. Verify that the SOIC-8 footprint aligns with existing PCB layout constraints.

FET, MOSFET Arrays Part Context

This part belongs to onsemi's discrete MOSFET portfolio, specifically designed for general-purpose switching applications. The dual-channel architecture allows for cost-effective implementation of bridge or half-bridge configurations. As a silicon-based device, it offers a balance between performance and manufacturability compared to wider bandgap alternatives.

FET, MOSFET Arrays Replacement Considerations

Public records indicate this specific part number is discontinued. Engineers should consult official substitution guides from onsemi for compatible replacements. Verify that alternative components match the 450 V rating, SOIC-8 package, and dual N-channel configuration to ensure functional equivalence without redesigning the circuit board.