FET, MOSFET Arrays FW389-TL-2W product image

FW389-TL-2W

$0.39
  • Description:MOSFET N/P-CH 100V 2A 8SOIC
  • Series:-

SKU:ebdff3841d95 Category: Brand:

  
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FW389-TL-2W is listed in the FET, MOSFET Arrays range at ChipApex. The manufacturer field lists onsemi. Its product description is MOSFET N/P-CH 100V 2A 8SOIC. Review the specifications below when checking this part for your BOM.

FET, MOSFET Arrays specifications for FW389-TL-2W

  • Description:MOSFET N/P-CH 100V 2A 8SOIC
  • Series:-
  • Mfr:onsemi
  • Package:Tape & Reel (TR)
  • Technology:MOSFET (Metal Oxide)
  • Configuration:N and P-Channel
  • FET Feature:Logic Level Gate, 4V Drive
  • Drain to Source Voltage (Vdss):100V
  • Current - Continuous Drain (Id) @ 25°C:2A
  • Rds On (Max) @ Id, Vgs:225mOhm @ 2A, 10V
  • Vgs(th) (Max) @ Id:-
  • Gate Charge (Qg) (Max) @ Vgs:10nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds:490pF @ 10V
  • Power - Max:1.8W
  • Operating Temperature:150°C (TJ)
  • Mounting Type:Surface Mount
  • Package / Case:8-SOIC (0.154", 3.90mm Width)
  • Supplier Device Package:8-SOIC
  • Grade:-
  • Qualification:-

FET, MOSFET Arrays datasheet and documents for FW389-TL-2W

FW389-TL-2W

FET, MOSFET Arrays Overview

The onsemi FW389-TL-2W is a complementary dual power MOSFET array housed in an 8-SOIC surface-mount package. It features an N-channel and P-channel configuration with a maximum drain-source voltage of 100V and a continuous drain current rating of 2A. The device supports a gate charge of 21 nC and operates within a temperature range from -55°C to +150°C TJ, with a power dissipation capacity of 1.8 W.

FET, MOSFET Arrays Feature Summary

  • Complementary dual MOSFET architecture integrating N-channel and P-channel devices in a single package
  • Surface-mount construction optimized for compact circuit board layouts
  • High junction temperature capability supporting demanding thermal environments

FET, MOSFET Arrays Applications

  • Power switching circuits requiring complementary logic control
  • Motor drive interfaces
  • DC-DC converter topologies

FET, MOSFET Arrays Procurement Notes

Verify the specific ordering suffix against official onsemi documentation to confirm exact electrical tolerances and packaging specifications. Ensure the selected variant matches the required thermal management strategy for the target application environment. Cross-reference the datasheet revision history to validate parameter consistency before finalizing component selection.

FET, MOSFET Arrays Selection Notes

Select this component when a matched N-P channel pair is required for synchronous rectification or high-side/low-side driving applications. Evaluate the 100V voltage rating against peak transient loads. Confirm that the SOIC footprint and 1.8 W power dissipation limit align with the system's thermal design constraints and space requirements.

FET, MOSFET Arrays Part Context

This part belongs to onsemi’s discrete power MOSFET portfolio, designed for general-purpose switching applications. It complements the company’s broader range of power solutions by providing integrated complementary pairs, reducing component count and simplifying layout compared to using separate individual transistors.

FET, MOSFET Arrays Replacement Considerations

Consult official cross-reference lists for direct pin-compatible alternatives. Verify that substitute parts maintain identical voltage, current, and thermal ratings to ensure circuit compatibility without redesign.

FW389-TL-2WFW389-TL-2W
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