FZ1000R33HE3BOSA1

Description：IGBT MODULE 3300V 1000A 1600W
Series：IHM-B

SKU:8e0befe59b2e Category: IGBT Modules Brand: Infineon Technologies

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Product introduction

Product Detailed Parameters

Description：IGBT MODULE 3300V 1000A 1600W
Series：IHM-B
Mfr：Infineon Technologies
Package：Tray
IGBT Type：Trench Field Stop
Configuration：Single Switch
Vce(on) (Max) @ Vge, Ic：3.1V @ 15V, 100A
Input：Standard
NTC Thermistor：No
Operating Temperature：-40°C ~ 150°C
Mounting Type：Chassis Mount
Package / Case：Module
Supplier Device Package：-
Voltage - Collector Emitter Breakdown (Max)：3300 V
Current - Collector (Ic) (Max)：1000 A
Power - Max：1600 W
Current - Collector Cutoff (Max)：5 mA
Input Capacitance (Cies) @ Vce：190 nF @ 25 V

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FZ1000R33HE3BOSA1

Overview

The FZ1000R33HE3BOSA1 is an IHM-B single-switch IGBT module featuring Trench/Fieldstop IGBT3 technology and emitter-controlled diodes. It provides a collector-emitter voltage of 3300 V, a nominal continuous DC collector current of 1000 A at 95 °C case temperature, and a repetitive peak current of 2000 A. The saturation voltage is typically 2.55 V at 25 °C. Operating junction temperatures range from -40 °C to +150 °C. The module utilizes an AlSiC base plate for enhanced thermal cycling capability and includes an isolated base plate with a comparative tracking index exceeding 600.

Feature Summary

High short-circuit capability with self-limiting behavior
Positive temperature coefficient for collector-emitter saturation voltage
Robust construction ensuring high DC stability
Low switching losses combined with low forward voltage drop

Applications

Chopper applications
Medium-voltage converters
Motor drives
Traction drives
Wind turbines

Procurement Notes

Verify the specific BOSA1 suffix against official Infineon documentation to confirm any variations in labeling or packaging compared to the standard FZ1000R33HE3. Ensure compliance with export regulations if applicable. Confirm RoHS status and material declarations prior to procurement.

Selection Notes

Select this component for high-power industrial and traction applications requiring robust performance at elevated temperatures. Verify that the system design accommodates the required mounting torque specifications and thermal interface materials to maintain the specified thermal resistance values under operational conditions.

Part Context

This part belongs to the Infineon IHM-B series of high-power IGBT modules. It is designed for demanding environments where reliability and thermal cycling endurance are critical. The module integrates fast Trench/Fieldstop IGBTs with emitter-controlled diodes to optimize switching performance and reduce electromagnetic interference in high-voltage systems.