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The FZ1000R65KE4P2NPSA1 is a single-switch IGBT module from Infineon Technologies, utilizing TRENCHSTOP™ IGBT4 technology. It features a maximum collector-emitter voltage of 6500 V and a continuous collector current of 1000 A at 25°C. The typical saturation voltage is 2.85 V, with a power dissipation rating of 3.6 MW. The component operates within a junction temperature range of -50°C to +175°C and uses screw mounting in an IHV package.
Verify the specific suffix P2 against official Infineon documentation to confirm pinout or mechanical variations compared to standard variants. Ensure compatibility with existing cooling solutions given the high power density. Request the latest datasheet to validate electrical characteristics before finalizing procurement specifications.
Select this module for applications requiring high voltage isolation and significant current handling capacity. Consider the thermal resistance and required heatsink interface when designing the system. Verify that the gate drive circuitry supports the specific requirements of IGBT4 technology for optimal switching efficiency.
This part belongs to the FZ series of highly insulated modules designed for high-power applications. It represents an evolution in IGBT technology, offering improved performance over previous generations like IGBT3. The series is widely used in heavy industry and energy infrastructure where reliability under high stress is critical.
Direct replacements may include other Infineon 6500 V IGBT modules such as FZ1000R65KE4NPSA1, provided mechanical and electrical parameters match. Cross-referencing with competitor high-voltage modules requires careful evaluation of thermal and switching characteristics.