FZ1200R12HE4HOSA2

Overview

The FZ1200R12HE4HOSA2 is a single-switch IGBT module utilizing Trench/Fieldstop IGBT4 technology with an integrated Emitter Controlled 4 diode. It features a collector-emitter voltage of 1200 V and a continuous DC collector current of 1825 A at 25°C. The typical collector-emitter saturation voltage is 1.75 V, while the diode forward voltage is 1.75 V. Total power dissipation reaches 7.15 kW. Operating junction temperature ranges from -40°C to 150°C. The module weighs 1300 g and utilizes an IHM-B housing.

Feature Summary

• Integrated Emitter Controlled 4 diode for optimized switching performance
• Extended operating temperature range up to 150°C
• High power density in IHM-B housing with CTI greater than 400

Applications

• High-power converters
• Motor drives

Procurement Notes

Verify the specific HOSA2 suffix against official Infineon documentation to confirm material content or regional compliance details. Ensure the ordering code matches the exact technical specifications required for the target application before finalizing procurement.

Selection Notes

Select this component for high-current applications requiring robust short-circuit withstand capability. Verify thermal management requirements against the specified junction-to-case thermal resistance values. Confirm that gate drive parameters align with the recommended internal gate resistor values for optimal switching loss reduction.

Part Context

This part belongs to the Infineon IGBT4 family, specifically designed for industrial traction and general-purpose high-power conversion. The HOSA2 designation typically indicates specific material content or regional regulatory compliance variations within the standard FZ1200R12HE4 product line.

Replacement Considerations

Direct replacements include other single-switch 1200V IGBT modules with comparable current ratings and thermal characteristics. Verify pinout compatibility and mounting dimensions when substituting with modules from different series or manufacturers.