ChipApex | Global Electronic Components Supplier
SEARCH
Search Product
Search Post
— IC芯片 | 连接器 | 传感器 | 被动器件 —
Consult the customer manager about the wholesale price.
consultation hotline：86-132-6715-2157
email：[email protected]
Contact the product manager for consultation. One-stop consultation is available.
Do you want a lower wholesale price? Please send us your inquiry and we will reply immediately.
Product Detailed Parameters
- Description：IGBT MODULE 1200V 1825A
- Series：IHM-B
- Mfr：Infineon Technologies
- Package：Tray
- IGBT Type：Trench Field Stop
- Configuration：Single Switch
- Vce(on) (Max) @ Vge, Ic：2.1V @ 15V, 1200A
- Input：Standard
- NTC Thermistor：No
- Operating Temperature：-40°C ~ 150°C
- Mounting Type：Chassis Mount
- Package / Case：Module
- Supplier Device Package：Module
- Voltage - Collector Emitter Breakdown (Max)：1200 V
- Current - Collector (Ic) (Max)：1825 A
- Power - Max：-
- Current - Collector Cutoff (Max)：5 mA
- Input Capacitance (Cies) @ Vce：74 nF @ 25 V
Download product information
Overview
The FZ1200R12HE4PHPSA1 is a single-switch IGBT module from Infineon Technologies, utilizing Trench/Fieldstop IGBT4 technology with an Emitter Controlled 4 diode. It features the IHM-B housing and comes with pre-applied thermal interface material. The device supports a collector-emitter voltage of 1200 V and a nominal continuous DC collector current of 1200 A at TH=100°C (1825 A at TH=25°C). It operates within a junction temperature range of -40°C to 150°C. Key electrical parameters include a typical VCE(sat) of 1.75 V at Tvj=25°C and a forward voltage of 1.80 V for the integrated diode.
Feature Summary
- Integrated Emitter Controlled 4 diode for optimized switching performance
- Pre-applied thermal interface material for simplified assembly
- Robust IHM-B housing design with high power density
- Extended operating temperature capability up to 150°C
Applications
- High-power converters
- Motor drives
Procurement Notes
Verify the specific suffix HPSA1 against official documentation to confirm the inclusion of pre-applied thermal interface material and exact packaging configuration. Ensure compliance with RoHS standards and check for any updated application notes regarding storage and handling procedures for modules containing TIM.
Selection Notes
Select this component for applications requiring high current density and robust short-circuit capability. Consider the internal gate resistance of 1.6 Ohms when designing the gate driver circuit. Verify that the mounting torque specifications for M6 screws are strictly followed to ensure proper mechanical stability and thermal contact.
Part Context
This module belongs to the IHM-B series, designed for industrial and traction applications. It utilizes Infineon's IGBT4 technology, which offers low switching losses and high reliability. The part is part of a broader family of high-power modules ranging from 500 A to 3600 A, providing standardized solutions for various inverter sizes.
Replacement Considerations
Direct replacements within the same series include FZ1200R12HE4P. Verify if the absence or presence of pre-applied TIM affects the thermal interface requirements in the target application before substituting.
