FZ1200R12HP4HOSA2

Overview

The FZ1200R12HP4HOSA2 is a single-switch IGBT module utilizing Trench-IGBT4 technology. It features a collector-emitter voltage of 1200 V and a nominal continuous DC collector current of 1200 A at 100°C case temperature, rising to 1790 A at 25°C. The repetitive peak collector current reaches 2400 A for 1 ms pulses. Total power dissipation is rated at 7.15 kW at 25°C. The module incorporates an integrated gate resistor of 1.6 Ω and operates within a junction temperature range of -40°C to 150°C.

Feature Summary

• Soft-switching Trench-IGBT4 technology
• High insulation strength with 4 kV AC isolation
• Extended operating temperature capability up to 150°C
• High power density in IHM-B housing

Applications

• High-power converters
• Motor drives
• Wind turbines

Procurement Notes

Verify the specific HOSA2 suffix against official Infineon documentation to confirm material content or compliance variations. Ensure that the ordering code matches the exact technical specifications required for the target application before finalizing procurement orders.

Selection Notes

Select this component for high-current applications requiring robust short-circuit withstand capability. Verify thermal management requirements against the specified junction-to-case thermal resistance values. Confirm that the drive circuitry supports the recommended gate voltages and internal resistance parameters.

Part Context

This part belongs to the IHM-B module series from Infineon Technologies. It utilizes silicon-based IGBT4 technology designed for industrial traction and general industrial applications. The module integrates both the IGBT switch and the anti-parallel diode within a single copper-clad substrate package.

Replacement Considerations

Consult official Infineon cross-reference lists for verified substitutes. Generic replacements may not match the specific thermal resistance or switching characteristics of the Trench-IGBT4 technology.