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Product Detailed Parameters
- Description：IGBT MODULE 1200V 1200A
- Series：IHM-B
- Mfr：Infineon Technologies
- Package：Tray
- IGBT Type：-
- Configuration：Single Switch
- Vce(on) (Max) @ Vge, Ic：2.6V @ 15V, 1.2kA
- Input：Standard
- NTC Thermistor：No
- Operating Temperature：-40°C ~ 125°C (TJ)
- Mounting Type：Chassis Mount
- Package / Case：Module
- Supplier Device Package：-
- Voltage - Collector Emitter Breakdown (Max)：1200 V
- Current - Collector (Ic) (Max)：1900 A
- Power - Max：7800 W
- Current - Collector Cutoff (Max)：5 mA
- Input Capacitance (Cies) @ Vce：90 nF @ 25 V
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Overview
The FZ1200R12KL4CNOSA1 is a single-switch IGBT module rated for 1200 V collector-emitter voltage and 1200 A continuous DC collector current at 80°C case temperature. It utilizes second-generation low-loss IGBT technology with soft Emitter Controlled Diode characteristics. The module features a maximum repetitive peak collector current of 2400 A and total power dissipation of 7.8 kW at 25°C. Key electrical parameters include a typical collector-emitter saturation voltage of 2.1 V, gate charge of 13.0 µC, and input capacitance of 90.0 nF. Thermal resistance from junction to case is 16.0 K/kW for the IGBT and 32.0 K/kW for the diode.
Feature Summary
- Incorporates second-generation low-loss IGBT technology for optimized switching performance.
- Features a soft Emitter Controlled Diode (ECD) to reduce reverse recovery losses.
- Provides high short-circuit capability with a withstand current of 9000 A for up to 10 µs.
Applications
- Industrial motor drives
- Medium-power inverter systems
- Uninterruptible power supplies
Procurement Notes
Verify the specific ordering suffix CNOSA1 against official Infineon documentation to confirm exact manufacturing specifications and compliance status. Confirm that the component matches the required thermal interface material properties and mounting torque values specified in the application notes before integration into production assemblies.
Selection Notes
Select this module based on its 1200 V rating and 1200 A continuous current capacity suitable for high-power industrial applications. Ensure the cooling system design accommodates the specified thermal resistances of 16.0 K/kW for the IGBT and 32.0 K/kW for the diode. Verify that the gate drive circuitry supports the recommended ±15 V operating range and internal gate resistor requirements.
Part Context
This component belongs to the FZ series of IGBT modules manufactured by Infineon Technologies. It is designed as a robust power semiconductor solution for demanding industrial environments requiring high current handling and reliable switching characteristics under varying thermal conditions.
Replacement Considerations
Publicly confirmed substitute part numbers are not available in the provided source material. Consult official manufacturer resources for potential cross-references or updated series replacements.
