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Product Detailed Parameters
- Description：IGBT MOD 1700V 1200A 7800W
- Series：IHM-B
- Mfr：Infineon Technologies
- Package：Tray
- IGBT Type：-
- Configuration：Single Switch
- Vce(on) (Max) @ Vge, Ic：2.3V @ 15V, 1200A
- Input：Standard
- NTC Thermistor：No
- Operating Temperature：-40°C ~ 150°C
- Mounting Type：Chassis Mount
- Package / Case：Module
- Supplier Device Package：Module
- Voltage - Collector Emitter Breakdown (Max)：1700 V
- Current - Collector (Ic) (Max)：1200 A
- Power - Max：7800 W
- Current - Collector Cutoff (Max)：5 mA
- Input Capacitance (Cies) @ Vce：97 nF @ 25 V
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Overview
The FZ1200R17HE4HOSA2 is a single-switch IGBT module from Infineon Technologies, utilizing Trench/Fieldstop IGBT4 technology. It features a collector-emitter voltage (VCES) of 1700 V and a nominal continuous DC collector current (IC nom) of 1200 A at TC = 100°C. The repetitive peak collector current (ICRM) reaches 2400 A for 1 ms pulses. At Tvj = 25°C, the typical collector-emitter saturation voltage (VCEsat) is 1.95 V, rising to 2.30 V at Tvj = 150°C. Total power dissipation (Ptot) is rated at 7.8 kW at TC = 25°C. The module operates within a junction temperature range of -40°C to +150°C.
Feature Summary
- Incorporates Trench/Fieldstop IGBT4 technology for low switching losses and low VCEsat.
- Features an IHM-B housing with a copper base plate and high power density.
- Provides 4 kV AC insulation for 1 minute and includes internal Al2O3 basic insulation.
- Designed for extended operating junction temperatures up to 150°C.
Applications
- High-power converters
- Motor drives
Procurement Notes
Verify the specific ordering suffix HOSA2 against official documentation to confirm material content and compliance status. Confirm that the component matches the standard FZ1200R17HE4 electrical specifications. Ensure the source document explicitly validates the suffix functionality before procurement.
Selection Notes
Select this module for applications requiring 1700 V blocking capability and 1200 A continuous current handling. Consider the thermal resistance values for heatsink design. Verify gate drive requirements align with the specified VGE thresholds and internal gate resistance characteristics.
Part Context
This component belongs to the Infineon IGBT4 series, specifically designed for industrial applications. It utilizes the IHM-B package format, which provides robust mechanical mounting and electrical isolation suitable for high-power inverter topologies.
Replacement Considerations
Public confirmed substitute part numbers are not available in the provided datasheet or verified local source material.
FAQ
What is the maximum repetitive peak collector current?
The maximum repetitive peak collector current (ICRM) is 2400 A for a pulse duration of 1 ms.
What is the isolation test voltage rating?
The module supports an isolation test voltage (VISOL) of 4.0 kV RMS at 50 Hz for 1 minute.
What is the typical forward voltage of the integrated diode?
The typical forward voltage (VF) of the diode is 1.80 V at Tvj = 25°C and IF = 1200 A.
