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Product Detailed Parameters
- Description：IGBT MODULE 1700V 1200A
- Series：IHM-B
- Mfr：Infineon Technologies
- Package：Tray
- IGBT Type：Trench Field Stop
- Configuration：Single Switch
- Vce(on) (Max) @ Vge, Ic：2.3V @ 15V, 1200A
- Input：Standard
- NTC Thermistor：No
- Operating Temperature：-40°C ~ 150°C
- Mounting Type：Chassis Mount
- Package / Case：Module
- Supplier Device Package：Module
- Voltage - Collector Emitter Breakdown (Max)：1700 V
- Current - Collector (Ic) (Max)：1200 A
- Power - Max：-
- Current - Collector Cutoff (Max)：5 mA
- Input Capacitance (Cies) @ Vce：97 nF @ 25 V
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Overview
The FZ1200R17HE4PHPSA1 is a single-switch IGBT module from Infineon Technologies, utilizing Trench/Fieldstop IGBT4 technology and an Emitter Controlled 4 diode. It features a 1700 V collector-emitter voltage (VCES) and a nominal continuous DC collector current of 1200 A at TH = 90°C. The module supports a repetitive peak collector current of 2400 A. Key electrical parameters include a typical VCEsat of 1.95 V at Tvj = 25°C and a gate threshold voltage of 5.80 V. It operates within a junction temperature range of -40°C to 150°C. The unit weighs 1300 g and incorporates pre-applied thermal interface material.
Feature Summary
- Integrated Emitter Controlled 4 diode for optimized switching performance
- Pre-applied thermal interface material for simplified assembly
- High power density with IHM-B housing and copper base plate
- Robust insulation with 4 kV AC isolation and high creepage distances
Applications
- High-power converters
- Motor drives
Procurement Notes
Verify the exact ordering suffix against official documentation to confirm specific packaging or variant details. Ensure compliance with RoHS standards as indicated in the datasheet. Confirm that the pre-applied thermal interface material requirements are met during storage and handling according to application notes.
Selection Notes
Select this component for applications requiring high short-circuit capability and low switching losses. Consider the 1700 V rating and 1200 A current capacity for industrial traction or inverter topologies. Verify thermal resistance values and mounting torque specifications to ensure reliable operation under expected load conditions.
Part Context
This module belongs to the IHM-B series, designed for high-power applications. It utilizes Infineon's IGBT4 technology combined with Emitter Controlled 4 diodes. The package provides high reliability and robust construction suitable for demanding industrial environments.
Replacement Considerations
Check for compatible modules within the same IHM-B family or other Infineon IGBT4 series parts. Ensure voltage, current, and thermal characteristics match the original design requirements before substitution.
