FZ1200R17HP4B2BOSA2

$852.81

Description：IGBT MOD 1700V 1200A 7800W
Series：IHM-B

SKU:7e22d6480e06 Category: IGBT Modules Brand: Infineon Technologies

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Product introduction

Product Detailed Parameters

Description：IGBT MOD 1700V 1200A 7800W
Series：IHM-B
Mfr：Infineon Technologies
Package：Tray
IGBT Type：Trench Field Stop
Configuration：Half Bridge
Vce(on) (Max) @ Vge, Ic：2.25V @ 15V, 1200A
Input：Standard
NTC Thermistor：No
Operating Temperature：-40°C ~ 150°C
Mounting Type：Chassis Mount
Package / Case：Module
Supplier Device Package：Module
Voltage - Collector Emitter Breakdown (Max)：1700 V
Current - Collector (Ic) (Max)：1200 A
Power - Max：7800 W
Current - Collector Cutoff (Max)：5 mA
Input Capacitance (Cies) @ Vce：97 nF @ 25 V

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FZ1200R17HP4B2BOSA2

Overview

The FZ1200R17HP4_B2 is a single-switch IGBT module utilizing Trench/Fieldstop IGBT4 technology and an Emitter Controlled Diode. It features a collector-emitter voltage (VCES) of 1700 V and a nominal continuous DC collector current (IC nom) of 1200 A at TC = 100°C, with a repetitive peak collector current (ICRM) of 2400 A. The typical collector-emitter saturation voltage (VCEsat) is 2.25 V at Tvj = 25°C. Total power dissipation reaches 7.8 kW at TC = 25°C. The module operates within a junction temperature range of -40°C to +150°C and includes an AlSiC base plate for enhanced thermal cycling capability.

Feature Summary

AlSiC base plate construction designed to increase thermal cycling capability
Emitter Controlled Diode optimized for regenerative operation
High insulation strength rated at 4 kV AC for one minute
Package design featuring high creepage and clearance distances

Applications

Resonant inverter applications
High power converters
Traction drives
Wind turbines

Procurement Notes

Verify the specific ordering suffix against official documentation to confirm mechanical or electrical variations. Confirm RoHS compliance status and material content sheets prior to procurement. Ensure that the requested part number matches the exact technical specifications required for the intended application environment.

Selection Notes

Select this component based on its 1700 V rating and 1200 A continuous current capacity. Consider the low VCEsat characteristics for efficiency requirements. Evaluate the thermal resistance values and the AlSiC base plate benefits for applications requiring high power density and robust thermal cycling performance under demanding operating conditions.

Part Context

This module belongs to the IHM-B series from Infineon Technologies. It integrates Trench/Fieldstop IGBT4 technology with an Emitter Controlled Diode. The design targets high-power industrial applications requiring reliable switching performance and extended operational temperature ranges up to 150°C.