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The FZ1200R33HE3BPSA1 is a single-switch IGBT module from the IHM-B series, utilizing Trench/Fieldstop IGBT3 technology. It features a collector-emitter voltage of 3300 V and a nominal continuous DC collector current of 1200 A at 95 °C case temperature. The device supports a repetitive peak collector current of 2400 A. Key electrical parameters include a saturation voltage of 2.70 V (typical) at 25 °C and a maximum gate-emitter voltage of ±20 V. The module incorporates an AlSiC base plate for enhanced thermal cycling capability and provides an isolation test voltage of 6.0 kV RMS.
Verify component authenticity through authorized Infineon distributors or official channels. Confirm that the specific BPSA1 suffix matches the required packaging and labeling specifications. Ensure compliance with export regulations if applicable to the destination region. Validate that the product status aligns with long-term availability requirements for the intended design lifecycle.
Select this module for high-power industrial applications requiring 3300 V blocking capability. Ensure the cooling system maintains the case temperature within specified limits to support the 1200 A continuous current rating. Verify that the drive circuit can handle the internal gate resistance and input capacitance characteristics. Confirm mechanical mounting torque specifications to ensure proper thermal interface contact.
This component belongs to the Infineon IHM-B (IGBT High-Power Module) family, designed for robust performance in demanding environments. It utilizes Trench/Fieldstop IGBT3 technology to optimize switching losses and conduction characteristics. The module is qualified for industrial applications according to IEC standards, ensuring reliability across a wide operating temperature range.
Direct replacements must match the 3300 V / 1200 A rating and IHM-B housing dimensions. Consider the FZ1200R33HE4 series for updated IGBT4 technology variants. Verify pinout compatibility and thermal resistance values before substituting.