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Product Detailed Parameters
- Description：IHV IHM T
- Series：-
- Mfr：Infineon Technologies
- Package：Tray
- IGBT Type：-
- Configuration：-
- Vce(on) (Max) @ Vge, Ic：-
- Input：-
- NTC Thermistor：-
- Operating Temperature：-
- Mounting Type：-
- Package / Case：-
- Supplier Device Package：-
- Voltage - Collector Emitter Breakdown (Max)：-
- Current - Collector (Ic) (Max)：-
- Power - Max：-
- Current - Collector Cutoff (Max)：-
- Input Capacitance (Cies) @ Vce：-
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Overview
The FZ1200R33HE4DB9BPSA1 is a single-switch IGBT module from Infineon Technologies, belonging to the IHV B series. It utilizes silicon technology and features a maximum collector-emitter voltage of 3.3 kV with a continuous collector current of 1200 A at 25°C. The device has a collector-emitter saturation voltage of 2.7 V and a gate-emitter leakage current of 400 nA. Power dissipation is rated at 1.8 MW. Operating temperatures range from -40°C to +150°C. The component is housed in a tray package and complies with RoHS standards.
Feature Summary
- Robust construction designed for high reliability under extreme temperature conditions
- High DC stability and short circuit capability suitable for demanding power applications
- Single switch configuration within the IHV B module family
Applications
- Traction systems
- Photovoltaic inverters
- Uninterruptible power supplies (UPS)
Procurement Notes
Verify authenticity through authorized distributors or direct manufacturer channels. Confirm RoHS compliance status via official documentation. Check for specific export restrictions if applicable. Ensure storage conditions meet semiconductor handling requirements. Validate part number suffixes against official datasheets to confirm exact specifications.
Selection Notes
Select this module for high-voltage applications requiring 3.3 kV blocking capability. Consider the 1200 A current rating for heavy-duty power conversion. Verify thermal management solutions for the specified operating temperature range. Compare saturation voltage characteristics against system efficiency requirements. Ensure mechanical mounting fits the IHV B housing dimensions.
Part Context
This component is part of Infineon's Trenchstop IGBT4 E4 series, specifically the IHV B variant. It serves as a high-power switching element for industrial and traction applications. The module integrates silicon IGBT technology for robust performance. It replaces older generations like the HE3 series with improved characteristics.
Replacement Considerations
The FZ1200R33HE3 is an older generation alternative within the same voltage and current class. Verify pinout compatibility and thermal interface requirements when substituting. Check for differences in saturation voltage and switching speeds between the E4 and E3 series.
