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Product Detailed Parameters
- Description：IGBT MODULE 3300V 2000A
- Series：-
- Mfr：Infineon Technologies
- Package：Tray
- IGBT Type：-
- Configuration：Full Bridge
- Vce(on) (Max) @ Vge, Ic：4.25V @ 15V, 1.2kA
- Input：Standard
- NTC Thermistor：No
- Operating Temperature：-40°C ~ 125°C
- Mounting Type：Chassis Mount
- Package / Case：Module
- Supplier Device Package：-
- Voltage - Collector Emitter Breakdown (Max)：3300 V
- Current - Collector (Ic) (Max)：2000 A
- Power - Max：14500 W
- Current - Collector Cutoff (Max)：12 mA
- Input Capacitance (Cies) @ Vce：150 nF @ 25 V
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Overview
The FZ1200R33KF2CS1NOSA1 is a single IGBT module with an integrated anti-parallel diode, rated for a collector-emitter voltage of 3300 V. It supports a continuous DC collector current of 1200 A at 80°C case temperature and up to 2000 A at 25°C. The device features a maximum total power dissipation of 14.5 kW at 25°C. Key electrical parameters include a typical collector-emitter saturation voltage of 3.40 V and a forward voltage of 2.80 V for the diode, both measured at 1200 A and 25°C junction temperature. The module utilizes an AlSiC baseplate material and incorporates internal isolation via Aluminum Nitride (AlN).
Feature Summary
- High-voltage capability designed for demanding industrial inverter applications.
- Robust thermal management achieved through an aluminum silicon carbide baseplate.
- Integrated fast recovery diode optimized for high-frequency switching operations.
Applications
- Industrial motor drives and traction inverters
- Medium voltage AC/DC converters
- Uninterruptible power supply systems
Procurement Notes
Verify component authenticity by cross-referencing the manufacturer's part number against official datasheets. Confirm that the specific ordering suffix matches the required technical specifications and packaging format. Ensure compliance with relevant safety standards before integration into final equipment designs.
Selection Notes
Evaluate thermal resistance values to ensure adequate heat sinking for the intended duty cycle. Verify gate drive requirements against the specified threshold and peak voltage limits. Consider the short-circuit withstand capability when designing protection circuits for the power stage.
Part Context
This component belongs to Infineon's high-power IGBT module portfolio, specifically engineered for medium-voltage applications. It represents a mature technology platform utilizing trench field-stop architecture to balance conduction losses with switching performance in heavy-duty industrial environments.
Replacement Considerations
Publicly confirmed substitute part numbers are not available in the provided documentation. Any replacement must be validated against the original electrical ratings, pinout configuration, and mechanical dimensions to ensure system compatibility.
FAQ
What is the maximum short-circuit current rating?
The module can withstand a short-circuit current of 6000 A for pulse durations up to 10 µs at a junction temperature of 125°C.
What material is used for the module baseplate?
The module utilizes an aluminum silicon carbide (AlSiC) baseplate to provide enhanced thermal conductivity and matched coefficient of thermal expansion.
What is the recommended mounting torque for M6 screws?
The specified mounting torque for M6 screws is between 4.25 Nm and 5.75 Nm, according to valid application notes.
