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The FZ1200R45HL4S7BPSA1 is a triple configuration IGBT module from Infineon Technologies, belonging to the IHM-B product series. It utilizes silicon technology and features a maximum collector-emitter voltage of 4.3 kV with a continuous collector current of 1.2 kA at 25°C. The device exhibits a collector-emitter saturation voltage of 2.55 V and a gate-emitter leakage current of 400 nA. Maximum power dissipation is rated at 2.4 MW. The physical dimensions are 190 mm x 140 mm x 48 mm, designed for screw mount installation. Operating temperatures range from -40°C to +150°C, with a maximum gate-emitter voltage of 26.25 V.
Verify the specific suffix S7 against official datasheets to confirm exact electrical characteristics and packaging details. Confirm RoHS compliance status through manufacturer documentation before integration. Ensure thermal interface materials match the specified mounting requirements for the 190 mm x 140 mm x 48 mm housing.
Select this component for applications requiring high voltage isolation up to 4.3 kV and substantial current handling capacity. The triple configuration allows for complex circuit topologies within a single package. Evaluate thermal management solutions suitable for the 2.4 MW power dissipation rating and ensure the operating environment stays within the specified temperature limits.
This part belongs to Infineon's High-Power (IHM) and High-Voltage (IHV) modules line, which emphasizes reliability and robustness. The IHM-B series is specifically engineered for industrial and traction applications, offering enhanced performance compared to standard modules. It represents a specialized solution for high-power density requirements.
FZ1200R45HL4BPSA1 is a related variant within the same series but differs in saturation voltage and package height.