FZ1200R45KL3B5NOSA1

$1,836.51

Description：IGBT MODULE 4500V 1200A
Series：-

SKU:67267e5e9cc8 Category: IGBT Modules Brand: Infineon Technologies

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Product introduction

Product Detailed Parameters

Description：IGBT MODULE 4500V 1200A
Series：-
Mfr：Infineon Technologies
Package：Tray
IGBT Type：-
Configuration：Single
Vce(on) (Max) @ Vge, Ic：2.85V @ 15V, 1200A
Input：Standard
NTC Thermistor：No
Operating Temperature：-50°C ~ 125°C
Mounting Type：Chassis Mount
Package / Case：Module
Supplier Device Package：Module
Voltage - Collector Emitter Breakdown (Max)：4500 V
Current - Collector (Ic) (Max)：1200 A
Power - Max：13500 W
Current - Collector Cutoff (Max)：5 mA
Input Capacitance (Cies) @ Vce：280 nF @ 25 V

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FZ1200R45KL3B5NOSA1

Overview

The FZ1200R45KL3B5NOSA1 is a highly insulated single-switch IGBT module utilizing Trench/Fieldstop IGBT3 technology. It features an AlSiC base plate and isolated base plate design for enhanced thermal cycling capability. Key electrical parameters include a collector-emitter voltage (VCES) of 4500 V, continuous DC collector current (ICDC) of 1200 A at TC=80°C, and repetitive peak collector current (ICRM) of 2400 A. The module provides high short-circuit capability with a maximum short-circuit current (ISC) of 6900 A. Insulation characteristics include an isolation test voltage (VISOL) of 10.4 kV AC for 60 seconds and a comparative tracking index (CTI) greater than 600.

Feature Summary

Highly insulated package with isolated base plate and AlSiC substrate
Trench/Fieldstop IGBT3 technology with positive temperature coefficient
High dynamic robustness and short-circuit capability
Enhanced creepage and clearance distances

Applications

High-power converters
Medium-voltage converters
Motor drives
Multi-level inverters
Traction drives

Procurement Notes

Verify the specific ordering suffix against official Infineon documentation to confirm exact mechanical or electrical variations. Ensure compliance with industrial qualification standards such as IEC 60747, 60749, and 60068 before integration. Confirm mounting torque specifications for M6, M4, and M8 screws to maintain proper thermal interface and insulation integrity during installation.

Selection Notes

Select this component for applications requiring high voltage blocking capability and robust thermal performance in medium-voltage environments. The AlSiC base plate offers superior thermal cycling resistance compared to standard copper base plates. Consider the internal gate resistor value and switching energy losses when designing the gate drive circuitry to optimize efficiency and dv/dt constraints.

Part Context

This part belongs to Infineon's IHV B series portfolio of high-voltage IGBT modules. It utilizes the IGBT3 chip generation, which balances low saturation voltage with high short-circuit robustness. The module is designed for industrial applications where high reliability and long-term stability under extreme electrical and thermal stress are critical requirements.