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The FZ1200R45KL3B5P2NOSA1 is a high-voltage IGBT module from Infineon Technologies, utilizing IHM T packaging. It features a collector-emitter voltage of 4.3 kV and a nominal continuous collector current of 1.2 kA at 25°C. The device exhibits a collector-emitter saturation voltage of 2.75 V and supports a power dissipation of 2.4 MW. Operating within a temperature range of -40°C to +150°C, it employs screw mounting for secure installation.
Verify the specific ordering suffix B5P2NOSA1 against official Infineon documentation to confirm exact electrical characteristics and package variant. Ensure compatibility with existing thermal management solutions and gate drive requirements before integration. Cross-reference datasheet parameters for short-circuit withstand time and safe operating area limits.
Select this module for applications requiring high current handling at elevated voltages. Consider the 4.3 kV rating for insulation coordination in medium voltage systems. Evaluate thermal resistance and cooling requirements based on the 2.4 MW power dissipation specification. Confirm that the IHM T package dimensions fit the mechanical constraints of the target assembly.
This component belongs to Infineon's high-power IGBT module portfolio, designed for demanding industrial applications. It represents a solution for high-efficiency power switching where reliability and robustness are critical. The technology leverages advanced trench IGBT structures to minimize conduction losses while maintaining high blocking capabilities.
Public confirmed substitute part numbers are not available in the provided documentation. Verify compatibility with direct replacements by comparing pinout, electrical ratings, and thermal characteristics with alternative modules from the same manufacturer or other vendors.