FZ1400R33HE4BPSA1

$1,481.05

Description：IGBT MODULE DIODE HVB130-3
Series：-

SKU:91ae2425ca2d Category: IGBT Modules Brand: Infineon Technologies

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Product introduction

Product Detailed Parameters

Description：IGBT MODULE DIODE HVB130-3
Series：-
Mfr：Infineon Technologies
Package：Bulk,Tray
IGBT Type：Trench Field Stop
Configuration：2 Independent
Vce(on) (Max) @ Vge, Ic：2.3V @ 15V, 1400A (Typ)
Input：Single Phase Bridge Rectifier
NTC Thermistor：No
Operating Temperature：-40°C ~ 150°C (TJ)
Mounting Type：Chassis Mount
Package / Case：Module
Supplier Device Package：Module
Voltage - Collector Emitter Breakdown (Max)：3300 V
Current - Collector (Ic) (Max)：1400 A
Power - Max：-
Current - Collector Cutoff (Max)：5 mA
Input Capacitance (Cies) @ Vce：187 nF @ 25 V

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FZ1400R33HE4BPSA1

Overview

The FZ1400R33HE4BPSA1 is a single-switch IGBT module from Infineon's Trenchstop IGBT4 - E4 series, housed in the IHM B package. It features a maximum collector-emitter voltage (VCEO) of 3.3 kV and a continuous collector current of 1.4 kA at 25°C. The typical collector-emitter saturation voltage is 2.3 V, with a power dissipation rating of 2.9 MW. Operating within a temperature range of -40°C to +150°C, it utilizes silicon technology and includes an internal gate resistance of 0.8 Ω.

Feature Summary

Robust construction designed for high reliability under extreme thermal conditions
High DC stability and short circuit capability suitable for demanding environments
Enhanced aluminum wire-bonding technology increases power cycling performance

Applications

Traction propulsion converters
Metro systems
Electrical multiple units (EMU)
High-speed trains
Locomotives

Procurement Notes

Verify the specific ordering suffix against official documentation to confirm exact configuration details. Ensure compatibility with existing heatsink designs and DC-link parameters before integration. Cross-reference the datasheet version to validate technical specifications and qualification status for industrial or traction use cases.

Selection Notes

Select this module for applications requiring high current density in standard IHV-B footprints. It serves as a direct upgrade path for platforms previously utilizing lower current ratings. Consider the enhanced power cycling capabilities when designing for cyclic load profiles common in urban transit applications.

Part Context

This component belongs to the Trenchstop IGBT4 - E4 family, representing an evolution in high-power semiconductor modules. It shares the physical dimensions of the established IHV-B housing but offers improved electrical characteristics. The module supports system designers in enhancing converter platforms with minimal mechanical redesign efforts.