FZ1500R33HE3C1NPSA1

Description：IHV IHM T XHP 3 3-6 5K
Series：IHM-B

SKU:19e7141bf0e4 Category: IGBT Modules Brand: Infineon Technologies

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Product introduction

Product Detailed Parameters

Description：IHV IHM T XHP 3 3-6 5K
Series：IHM-B
Mfr：Infineon Technologies
Package：Tray
IGBT Type：Trench Field Stop
Configuration：Full Bridge
Vce(on) (Max) @ Vge, Ic：3.1V @ 15V, 1.5kA
Input：Standard
NTC Thermistor：No
Operating Temperature：-40°C ~ 150°C (TJ)
Mounting Type：Chassis Mount
Package / Case：Module
Supplier Device Package：AG-IHVB190-3
Voltage - Collector Emitter Breakdown (Max)：3300 V
Current - Collector (Ic) (Max)：1500 A
Power - Max：2400000 W
Current - Collector Cutoff (Max)：5 mA
Input Capacitance (Cies) @ Vce：280 nF @ 25 V

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FZ1500R33HE3C1NPSA1

Overview

The FZ1500R33HE3C1NPSA1 is a single IGBT module from the IHM-B series, utilizing Trench Field Stop technology. It features a collector-emitter breakdown voltage of 3300 V and a nominal continuous collector current of 1500 A at 25°C. The device has a maximum power dissipation of 2.4 MW and operates within a junction temperature range of -40°C to +150°C. Packaged in the AG-IHVB190-3 chassis mount format, it provides high DC stability and short-circuit capability for robust industrial applications.

Feature Summary

Utilizes Trench Field Stop IGBT technology for optimized switching performance
Designed with high short-circuit capability for system protection
Ensures high DC stability under continuous operational loads

Applications

High-power industrial motor drives
Medium-voltage traction systems
Industrial power conversion units

Procurement Notes

Verify the specific suffix C1NPSA1 against official Infineon documentation to confirm exact electrical characteristics and packaging details. Ensure compatibility with the AG-IHVB190-3 mounting interface. Confirm RoHS compliance status and export restrictions prior to order placement. Cross-reference datasheet revisions to avoid obsolete specifications.

Selection Notes

Select this module for applications requiring 3300 V blocking voltage and 1500 A current handling. The Trench Field Stop technology offers advantages over standard IGBTs in efficiency. Consider thermal management requirements given the 2.4 MW power dissipation rating. Verify gate drive compatibility for reliable switching operation.

Part Context

This component belongs to Infineon's IHM-B series of high-power IGBT modules. It represents an evolution in Trench Field Stop technology, designed for demanding power electronics environments. The module integrates advanced silicon capabilities into a standardized chassis-mount package for ease of integration.