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The FZ1600R17KE3B2NOSA1 is a single-switch IGBT module from Infineon Technologies, utilizing Trenchstop IGBT3-E3 technology. It features a collector-emitter voltage of 1700 V and a continuous DC collector current of 1600 A at 80°C case temperature. The module incorporates an integrated anti-parallel diode with a forward current rating of 1600 A. Packaged in the IHM form factor with an AlSiC baseplate, it supports operation up to a junction temperature of 150°C. Key electrical parameters include a typical saturation voltage of 2.00 V and a gate charge of 19.0 µC.
Verify component authenticity through authorized distribution channels or direct manufacturer engagement. Confirm that the specific ordering suffix matches the required technical specifications and packaging format. Request official datasheets and product qualification reports to ensure compliance with intended application standards before finalizing procurement.
Evaluate thermal management requirements based on the specified junction-to-case resistance values. Ensure the driving circuit provides appropriate gate voltages within the maximum rated limits. Consider the module's stray inductance when designing the DC-link layout to minimize voltage overshoot during switching transitions.
This component belongs to the FZ1600R17 series of high-power IGBT modules designed for industrial applications. It represents the E3 generation of Trenchstop technology, offering improved efficiency compared to previous iterations. The module is engineered for reliability in demanding power conversion environments requiring high current density.
FZ1600R17HP4HOSA2