FZ1800R12HE4B9HOSA2

Overview

The FZ1800R12HE4B9HOSA2 is a single-switch IGBT module from Infineon Technologies, utilizing Trench/Fieldstop IGBT4 technology and an Emitter Controlled 4 diode. It operates with a collector-emitter voltage (VCES) of 1200 V and a nominal continuous DC collector current (IC nom) of 1800 A at TC = 100°C. The repetitive peak collector current (ICRM) reaches 3600 A for 1 ms pulses. Key electrical parameters include a maximum collector-emitter saturation voltage (VCE sat) of 2.10 V at Tvj = 150°C and a forward voltage (VF) of 2.35 V for the integrated diode at the same temperature. The module features a copper baseplate, an IHM-B housing, and supports an operating junction temperature range of -40°C to 150°C.

Feature Summary

• Incorporates Trench/Fieldstop IGBT4 technology combined with Emitter Controlled 4 diodes for optimized switching performance.
• Features an IHM-B housing design that provides high power density and robust mechanical construction.
• Includes internal isolation using Al2O3 and offers a comparative tracking index (CTI) greater than 400.

Applications

• High-power converters
• Motor drives

Procurement Notes

Verify the specific ordering suffix HOSA2 against official documentation to confirm material content and compliance status. Ensure the component matches the IHM-B package outline and terminal configuration required by the target circuit board layout. Confirm thermal interface material specifications align with the datasheet's thermal resistance calculations.

Selection Notes

Select this module for applications requiring high current handling up to 1800 A and robust short-circuit capability. Evaluate the thermal management system based on the specified junction-to-case thermal resistance values. Ensure gate drive circuits can accommodate the recommended ±15 V operation and internal gate resistor characteristics for optimal switching loss control.

Part Context

This component belongs to the Infineon IGBT4 - E4 series within the IHM-B family. It is designed for industrial and traction applications demanding high reliability. The module integrates a single IGBT switch and a complementary anti-parallel diode in a standardized high-power housing format compatible with existing cooling solutions.

Replacement Considerations

Direct replacements must match the 1200 V / 1800 A rating and IHM-B footprint. Verify compatibility of switching speeds and thermal characteristics with alternative models from the same manufacturer or other vendors offering equivalent trench fieldstop technologies.